G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
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Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces
TL;DR: In this paper, the second-harmonic generation (SHG) intensities of singular and vicinal (111) and (001) Si-dielectric interfaces can be described accurately as dipole radiation originating from the anharmonic motion of bond charges parallel to the bond directions.
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1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process
Y. Wu,Y.M. Lee,Gerald Lucovsky +2 more
TL;DR: In this paper, dual layer gate dielectrics have been formed using remote plasma enhanced CVD of nitride onto plasma-grown oxide interface layers, and a tunneling current reduction of more than 100 fold was found for devices with 1.6 nm N/O dielectric due to increased film thickness and interface nitridation.
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Post‐deposition relaxation of electronic defects in hydrogenated amorphous silicon
TL;DR: In this paper, the authors determine the kinetics of this relaxation process in films with similar hydrogen concentrations deposited by reactive magnetron sputtering at a substrate temperature of ∼40°C, and annealed at temperatures greater than 150°C.
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A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys
TL;DR: In this paper, a molecular orbital, MO, model was developed to demonstrate that the electronic structure of non-crystalline oxide dielectrics depends primarily on the coordination and symmetry of transition metal atoms and the orbital energies of their oxygen neighbors.
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Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors
Dakai Chen,F.E. Mamouni,X.J. Zhou,Ronald D. Schrimpf,Daniel M. Fleetwood,Kenneth F. Galloway,S. Lee,Hyungtak Seo,Gerald Lucovsky,Bongim Jun,John D. Cressler +10 more
TL;DR: In this article, the effects of ionizing radiation and bias-temperature stress on Si MOS devices with HfSiON gate dielectrics were investigated and it was shown that the low-SiN films are more sensitive to ionising radiation than the high-SiO films.