Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

/pdf/high-k-gate-dielectrics-current-status-and-materials-zjvba0c4u8.pdf

High-κ gate dielectrics: Current status and materials properties considerations

Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.

Phase-change materials for rewriteable data storage

At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of ≅ 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of ≅ 10 nanometers.

/pdf/superconducting-interfaces-between-insulating-oxides-21qkm7ai8t.pdf

Superconducting Interfaces Between Insulating Oxides

Raman spectroscopy is a standard characterization technique for any carbon system. Here we review the Raman spectra of amorphous, nanostructured, diamond-like carbon and nanodiamond. We show how to use resonant Raman spectroscopy to determine structure and composition of carbon films with and without nitrogen. The measured spectra change with varying excitation energy. By visible and ultraviolet excitation measurements, the G peak dispersion can be derived and correlated with key parameters, such as density, sp(3) content, elastic constants and chemical composition. We then discuss the assignment of the peaks at 1150 and 1480 cm(-1) often observed in nanodiamond. We review the resonant Raman, isotope substitution and annealing experiments, which lead to the assignment of these peaks to trans-polyacetylene.

Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond

Three related topics are addressed in this article: (i) X-ray spectroscopy (XAS) studies of remote plasma deposited (RPD) nc-SiO2 and nc-GeO2 emphasizing (a) band-edge states and (b) pre-existing bonding defects; (ii) interpretation of X-ray absorption and photoemission spectra based on many electron theory, and in particluar charge transfer multiplets (CTs); and (iii) band-edge electronic structure and intrinsic defects in nc-SiO2 and nc-GeO2 thin films and their interfaces with Si and Ge substrates. The most significant result is the identification of local atomic structure in medium range order (MRO) clusters in which the pre-existing defects are embedded. These defects are vacated O-atom sites in which O-atoms have never been resident. They are confined to 1 nm scale chemically-ordered clusters distributed non-periodically with quartz-structured 4-fold coordinated Si(Ge) and 2-fold coordinated O bonding in 12-atom regular rings. Vacated O-atom sites defects are formed during processing and annealing, and reducing macroscopic as well as local bond-strain strain. They are qualitatively different, and readily distinguished from defects introduced by electrical, and by X-ray, γ-ray or high energy electron stressing of nc-SiO2 and nc-GeO2.

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/5B34F7EC2E77A177A57B9D6E6B868547/S1946427400411991a.pdf/div-class-title-electron-cycloytron-resonance-plasma-etching-cleaning-for-si-device-fabrication-div.pdf

Electron Cycloytron Resonance Plasma Etching/Cleaning For Si Device Fabrication

We have combined nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) and spectroscopic ellipsometry (SE) to measure the energies and depth distribution of charge traps in SiO 2 /SiO x /SiO 2 gate dielectrics for radiation-tolerant electronics. It is now known that suboxide layers within silicon-on-oxide (SOI) structures result in Si nanoclusters that can reduce the shift of the flatband voltage by trapping protons formed during hole injection [1]. Previous studies based on ion implantation showed that positive charge trapping is due to proton trapping at network oxygen atoms having large Si-O-Si bond angles. Such traps can be used to reduce the net positive charge during exposure to ionizing radiation that result in negative flatband voltage shifts and pathways for charge leakage. We used thermal oxidation to prepare SiO 2 /SiO x /SiO 2 gate dielectrics with reduced oxide concentrations and monitored their optical absorption and emission features with annealing and irradiation. These nanoscale film structures are known to phase segregate with annealing from amorphous Si (a-Si) into nanocrystalline surrounded by a SiO 2 shell [2]. The use of cathodoluminescence and UV SE enables us to measure optical transitions at energies involving not only intra- but also interphase transitions due to their intimate contact and high area. Understanding the physical nature of such traps may enable control of radiation-induced holes in higher-K dielectric SOI structures.

Nanoscale depth-resolved electronic properties of SiO 2 /SiO x /SiO 2 gate dielectrics for radiation-tolerant electronics

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

Gerald Lucovsky

Papers

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

Electron Cycloytron Resonance Plasma Etching/Cleaning For Si Device Fabrication

Nanoscale depth-resolved electronic properties of SiO 2 /SiO x /SiO 2 gate dielectrics for radiation-tolerant electronics

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics