G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
Papers
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Journal ArticleDOI
Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics
Gerald Lucovsky,Y. Zhang,Jan Lüning,Valery V. Afanas'ev,Andre Stesmans,Stefan Zollner,Dina H. Triyoso,B. R. Rogers,Jerry L. Whitten +8 more
TL;DR: In this article, the Jahn-Teller (J-T) term splittings of the transition and rare earth atoms of HfO2 and other transition metal as-deposited nanocrystalline oxides are analyzed.
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Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications
TL;DR: The unique properties of non-crystalline SiO2 are explained by the encapsulation of six-member ring clusters by five- and seven-member rings on average in a compliant hard-soft nano-scaled inhomogeneous network, enabling for applications including thermally grown ~1.5 nm SiO 2 layers for Si field effect transistor devices to optical components with centimeter dimensions.
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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
Choelhwyi Bae,Gerald Lucovsky +1 more
TL;DR: In this paper, the quality of the interface and dielectric layer with/without RPAO process has been investigated by fabricated GaN metaloxide-semiconductor capacitors.
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Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2
TL;DR: In this paper, band edge spectroscopic measurements, combined with X-ray absorption spectroscopy, have identified localized defect states at this energy below the conduction band edges of HfO 2, and ZrO 2.
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Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
TL;DR: In this paper, the performance of Al-gate n-GaN∕nitrided-thin-Ga2O3∕SiO2 and nGaN ∕Si3N4 MIS capacitors was evaluated by capacitance-voltage (C-V) measurements.