G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
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Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
TL;DR: In this paper, the degradation of ultrathin oxides is measured and characterized by the dual voltage time dependent dielectric wearout (TDDW) technique, where a distinct breakdown can be determined at the operating voltage I-t curve.
Journal Article
EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5
TL;DR: In this paper, the authors present EXAFS data that describe local bonding configurations in as-deposited Ge 2 Sb 2 Te 5, and show that Ge 2 sb 2 te 5 may best be viewed as a random array of Ge 2 Te 3 and Sb2Te 3 structural units imbedded in a tissue of a-Te, 17% of which is overcoordinated.
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Hydrogen in amorphous silicon: local bonding and vibrational properties
TL;DR: In this paper, the bonding of hydrogen to silicon, alloy and dopant atoms in amorphous silicon based alloys including a-Si:H, n:H and a-N:H is discussed, where the discussion is restricted to the monohydride arrangements that dominate in the so-called device-grade materials.
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Preparation of device‐quality SiO2 thin films by remote plasma‐enhanced chemical vapour deposition (PECVD): Applications in metal‐oxide‐semiconductor (MOS) devices
TL;DR: In this paper, the authors focus on the evolution of a low-temperature remote plasma-assisted deposition process that has yielded device-quality SiO2 and SiO 2-Si3N4 alloy thin films as defined by their performance in metal-oxide-semiconductor (MOS) devices.
Journal ArticleDOI
EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5
TL;DR: In this paper, the authors present EXAFS data that describe local bonding configurations in as-deposited Ge 2 Sb 2 Te 5, showing that the structure and properties of a -chalcogenide may best be viewed as a random array of Ge 2 Te 3 and Sb2 Te 3 structural units imbedded in a tissue of a te 5, 17% of which is over coordinated.