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Gerald Lucovsky

Researcher at North Carolina State University

Publications -  324
Citations -  10085

Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.

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Journal ArticleDOI

Nitrogen bonding, stability, and transport in AlON films on Si

Gabriel Vieira Soares, +7 more
- 28 May 2004 - 
TL;DR: In this article, angle-resolved x-ray photoelectron spectroscopy was used to investigate the chemical environment of N in nitrided aluminum oxide films on Si(001).
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Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys

Gerald Lucovsky, +5 more
- 06 Aug 2002 - 
TL;DR: In this article, a systematic x-ray absorption spectroscopy study of transitions between high-k transition metal (TM) rare earth dielectrics and SiO2 and Si oxynitride alloys is presented.
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Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride

Christoph Boehme, +1 more
- 13 Sep 2001 - 
TL;DR: In this article, the dominant hydrogen dissociation reactions during annealing of hydrogenated amorphous-silicon nitride were determined by comparison of the bond density dynamics with various reaction models.
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Electronic states at the interface of Ti–Si oxide on Si(100)

C. C. Fulton, +2 more
- 06 Aug 2002 - 
TL;DR: In this paper, the authors employ an ultrathin layer of SiO2 prior to the formation of a Ti oxide to limit the density of defect states, and the electronic structure is observed during the stepwise growth of the oxide using x-ray and ultraviolet photo-emission spectroscopy.
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Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

B.K. Choi, +11 more
- 01 Dec 2002 - 
TL;DR: The reliability degradation due to high-energy ion-induced latent defects is explained by a simple percolation model of conduction through SiO/sub 2/ layers with irradiation and/or electrical stress-induced defects as mentioned in this paper.