Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

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High-κ gate dielectrics: Current status and materials properties considerations

Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.

Phase-change materials for rewriteable data storage

At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of ≅ 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of ≅ 10 nanometers.

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Superconducting Interfaces Between Insulating Oxides

Raman spectroscopy is a standard characterization technique for any carbon system. Here we review the Raman spectra of amorphous, nanostructured, diamond-like carbon and nanodiamond. We show how to use resonant Raman spectroscopy to determine structure and composition of carbon films with and without nitrogen. The measured spectra change with varying excitation energy. By visible and ultraviolet excitation measurements, the G peak dispersion can be derived and correlated with key parameters, such as density, sp(3) content, elastic constants and chemical composition. We then discuss the assignment of the peaks at 1150 and 1480 cm(-1) often observed in nanodiamond. We review the resonant Raman, isotope substitution and annealing experiments, which lead to the assignment of these peaks to trans-polyacetylene.

Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

This paper is presented to honor Professor Radu Grigorovici at his 90th birthday celebration for his outstanding contributions to the chemical bonding and atomic structure of amorphous semiconductors, including the chalcogenides that are highlighted at this conference. A chemical bonding approach is applied in this paper to non-crystalline transition metal oxides and their silicate and aluminate alloys. Transition metal oxides and alloys are considerably more ionic than Si0 2, and this increased ionicity, along with the localized electronic structure associated with transition metal atom d-states is the basis for the significant differences in their optical and electrical properties. This paper also provides new insights into the electronic structure of transition metal chalgogenide alloys.

Electronic Structure, Amorphous Morphology and Thermal Stability of Transition Metal Oxide and Chalcogenide Alloys

Interfaces between crystalline-Si and high-K Hf-based oxide gate dielectrics have a lower-K interfacial transition region (ITR), generally 0.6–0.8nm SiON, which prevents reactions between Si and Hf precursors used in film deposition. These ITRs contribute ∼0.35nm to the equivalent oxide thickness limiting aggressive scaling. This article addresses Hf-based high-K gate dielectrics for devices on crystalline Ge substrates. The band gaps of GeO2 and Ge3N4 are reduced with respect to their Si counterparts, and as such may contribute to increased levels of interfacial defect states. A novel processing sequence is presented for (i) depositing HfO2 and Hf Si oxynitrides (HFSiON) onto N-passivated Ge(111) and Ge(100), and subsequently (ii) removing Ge–N interfacial bonding during 800°C thermal annealing in Ar. Near edge x-ray absorption spectroscopy and medium energy ion scattering measurements have confirmed that the interfacial nitrogen is indeed removed. However, there are reactions between the Ge substrate an...

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

Gerald Lucovsky

Papers

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

Electronic Structure, Amorphous Morphology and Thermal Stability of Transition Metal Oxide and Chalcogenide Alloys

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

Oxide formation and passivation for micro- and nano-electronic devices