G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
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Journal ArticleDOI
Coupled electron-hole dynamics at the si/sio2 interface
Wei Wang,Gunter Lüpke,M. Di Ventra,Sokrates T. Pantelides,Jonathan M. Gilligan,Norman Tolk,I. C. Kizilyalli,P. K. Roy,Giorgio Margaritondo,Gerald Lucovsky +9 more
TL;DR: In this article, the authors reported a new and surprising enhancement of the electric field at the Si/SiO2 interface following the cessation of intense pulsed near-infrared radiation.
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Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys
TL;DR: In this article, the physical and electrical properties of noncrystalline Al2O3, Ta2O5, and their alloys, (Ta 2O5)x(Al 2O3)1−x, are investigated.
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Radiation effects in new materials for nano-devices
Ronald D. Schrimpf,Daniel M. Fleetwood,Michael L. Alles,Robert A. Reed,Gerald Lucovsky,Sokrates T. Pantelides +5 more
TL;DR: In this article, the effects of radiation on electronics, with emphasis on the impact of new materials, are reviewed and solutions change significantly as new materials are introduced and feature sizes become smaller.
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Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si–O–F alloy films
Gerald Lucovsky,Hong Yang +1 more
TL;DR: In this article, the authors used infrared spectra to identify inductive effects of Si-O-F bonds on the properties of Si groups that are back-bonded to the Si atom of that Si-F group.
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Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films
TL;DR: In this article, the electrical characteristics of n-GaN∕nitrided-thin-Ga2O3∕SiO2 and n-gaN ∕Si3N4 metal-insulator-semiconductor (MIS) capacitors have been compared, and the work function difference ϕms and effective dielectric-fixed charge density Qf,eff have been determined.