G
Giuseppe Iannaccone
Researcher at University of Pisa
Publications - 394
Citations - 12415
Giuseppe Iannaccone is an academic researcher from University of Pisa. The author has contributed to research in topics: Field-effect transistor & Graphene. The author has an hindex of 45, co-authored 378 publications receiving 10498 citations. Previous affiliations of Giuseppe Iannaccone include Istituto Nazionale di Fisica Nucleare & National Research Council.
Papers
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Journal ArticleDOI
Electronics based on two-dimensional materials
Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
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Design criteria for the RF section of UHF and microwave passive RFID transponders
G. De Vita,Giuseppe Iannaccone +1 more
TL;DR: In this paper, a set of design criteria for the radio-frequency (RF) section of long-range passive RF identification (RFID) transponders operating in the 2.45 GHz or 868-MHz industrial, scientific, and medical (ISM) frequency ranges is derived in particular on the voltage multiplier, the power-matching network, and the backscatter modulation.
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Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures
Daryl McManus,Sandra Vranic,Freddie Withers,Veronica Sanchez-Romaguera,Massimo Macucci,Huafeng Yang,Roberto Sorrentino,Khaled Parvez,Seok-Kyun Son,Giuseppe Iannaccone,Kostas Kostarelos,Gianluca Fiori,Cinzia Casiraghi +12 more
TL;DR: A general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication and in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications.
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Simulation of Graphene Nanoribbon Field-Effect Transistors
TL;DR: In this paper, an atomistic 3D simulation of graphene nanoribbon field effect transistors (GNR-FETs) is presented, based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight binding Hamiltonian.
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Performance of arsenene and antimonene double-gate MOSFETs from first principles
TL;DR: Detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation and demonstrate that ultra-scaled devices in the sub-10-nm scale show a performance that is compliant with industry requirements.