H
Hans Norström
Researcher at Uppsala University
Publications - 77
Citations - 850
Hans Norström is an academic researcher from Uppsala University. The author has contributed to research in topics: Silicon & Sputtering. The author has an hindex of 16, co-authored 77 publications receiving 822 citations. Previous affiliations of Hans Norström include Ericsson & Infineon Technologies.
Papers
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Journal ArticleDOI
A comparative study of the diffusion barrier properties of TiN and ZrN
TL;DR: In this paper, the usefulness of Ti/TiN and Zr/ZrN bilayers as low resistivity contacts and diffusion barriers between doped silicon and aluminium was examined.
Journal ArticleDOI
Properties and coating rates of diamond-like carbon films produced by R.F. glow discharge of hydrocarbon gases
TL;DR: In this article, the properties of films produced by cracking various hydrocarbon gases in an r.f. glow discharge were studied and it was shown that the production rates for the films increased with the molecular weight for gases having the same structural form, e.g. C4H10 had a higher coating rate than CH4 under the same plasma conditions.
Patent
Semiconductor process and integrated circuit
TL;DR: In this paper, an IC fabrication method consisting of providing a substrate (10, 41), forming an active region (41) for a bipolar transistor and a MOS device in the substrate, forming isolation areas (81) around, in a horizontal plane, the active regions, forming a gate region (111, 112) on the active region for the bipolar transistor, and forming a layer (141) of an insulating material on the MOS gate region and on the transistor for the transistor.
Patent
Trench-isolated bipolar devices
TL;DR: In this article, a hole is filled with electrically conducting material and extends from the surface of the device to the bottom diffusion (103), so that the electrical conducting material in the hole is in contact therewith.
Journal ArticleDOI
Bipolar integrated circuits in SiC for extreme environment operation
Carl-Mikael Zetterling,Anders Hallén,Raheleh Hedayati,Saleh Kargarrazi,Luigia Lanni,B. Gunnar Malm,Shabnam Mardani,Hans Norström,Ana Rusu,Sethu Saveda Suvanam,Ye Tian,Mikael Östling +11 more
TL;DR: Silicon carbide integrated circuits have been suggested for extreme environment operation as discussed by the authors. But the challenge of a new technology is to develop process flow, circuit models and circuit designs for extreme environments operation.