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Hoi Sing Kwok

Researcher at Hong Kong University of Science and Technology

Publications -  1207
Citations -  32982

Hoi Sing Kwok is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Liquid crystal & Thin-film transistor. The author has an hindex of 77, co-authored 1165 publications receiving 29448 citations. Previous affiliations of Hoi Sing Kwok include University of Hong Kong & University of California, Berkeley.

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Fringe field effect free high-resolution display and photonic devices using deformed helix ferroelectric liquid crystal

TL;DR: The photonic industry limiting the pixel per inch (PPI) to ~450 as mentioned in this paper, which is one of the biggest bottlenecks for the display, and this is the case for AR/VR headsets.
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Alleviate microcavity effects in top-emitting white organic light-emitting diodes for achieving broadband and high color rendition emission spectra

TL;DR: In this paper, a tri-cathode-layer top-emitting WOLED with evenly separated red, green and blue emission peaks has been shown to achieve an efficiency of 23cd/A, 10.5lm/W and a high color rendering index of 85.
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Aggregate‐induced emission in light‐emitting liquid crystal display technology

TL;DR: In this article, the authors studied the aggregate-induced emission effect of a luminescent liquid crystalline molecule TPE-PPE as a luminophore dopant in liquid crystal displays.
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Active matrix field sequential color electrically suppressed helix ferroelectric liquid crystal for high resolution displays

TL;DR: In this paper, a 3-inch 250ppi active matrix field sequential color electrically suppressed ferroelectric liquid crystal (ESHFLC) display is presented, which has a high contrast ratio over 10K:1.
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CO2 laser‐induced melting of indium antimonide

TL;DR: In this article, the authors used CO2 laser pulses to identify the following sequence of events in high power laser-semiconductor interaction: generation of a dense (≳1018 cm3) plasma, melting of the crystal by free carrier absorption, formation of surface ripples at the breakdown threshold, and formation of a crater at higher intensities.