H
Hoi Sing Kwok
Researcher at Hong Kong University of Science and Technology
Publications - 1207
Citations - 32982
Hoi Sing Kwok is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Liquid crystal & Thin-film transistor. The author has an hindex of 77, co-authored 1165 publications receiving 29448 citations. Previous affiliations of Hoi Sing Kwok include University of Hong Kong & University of California, Berkeley.
Papers
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Journal ArticleDOI
Autostereoscopic 3D pictures on optically rewritable electronic paper
Xiaoqian Wang,Lu Wang,Jiatong Sun,Abhishek Kumar Srivastava,Vladimir G. Chigrinov,Hoi Sing Kwok +5 more
TL;DR: This article discloses a method to fabricate the three‐dimensional (3D) image on an optically rewritable (ORW) electronic paper (e‐paper) by deploying the lenticular lenses array on the top of the ORW e‐paper.
Book ChapterDOI
New developments in photo-aligning and photo-patterning technologies: physics and applications
TL;DR: In this article, a new generation of optical security elements based on photo-patterning technology enables the fabrication of optical-security devices, which can be applied directly to documents via printing or coating methods as well as indirectly by hot-stamping processes.
Journal ArticleDOI
Generation and measurement of picosecond voltage pulses in YBa2Cu3O7 thin films
TL;DR: In this article, an autocorrelation method was proposed and applied to measure the temporal decay of ultrafast voltage pulses in the superconducting state using a 40 ps laser.
Journal ArticleDOI
Effects of high temperature post-annealing on the properties of solution-based metal-induced crystallized polycrystalline silicon films
Chunya Wu,Chunya Wu,Chunya Wu,Zhiguo Meng,Zhiguo Meng,Zhiguo Meng,Shuyun Zhao,Shuyun Zhao,Shuyun Zhao,Shaozhen Xiong,Shaozhen Xiong,Man Wong,Hoi Sing Kwok +12 more
TL;DR: In this article, a solution-based metal-induced crystallized (S-MIC) poly silicon (poly-Si) thin films with different domain sizes were post-annealed at 600, 700, 800, and 900 °C for 2 h each in this order.
Journal ArticleDOI
Polymer electrophosphorescent light-emitting diode using aluminum bis(2-methyl-8-quinolinato) 4-phenylphenolate as an electron-transport layer
TL;DR: In this article, the characteristics of organic light-emitting diodes depend critically on the arrangement and choice of the constituent organic layers, and the peak efficiencies of the Diodes were sensitive to the concentration of Ir(ppy)/sub 3.