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Hoi Sing Kwok

Researcher at Hong Kong University of Science and Technology

Publications -  1207
Citations -  32982

Hoi Sing Kwok is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Liquid crystal & Thin-film transistor. The author has an hindex of 77, co-authored 1165 publications receiving 29448 citations. Previous affiliations of Hoi Sing Kwok include University of Hong Kong & University of California, Berkeley.

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Porous and pillar structures formed by anodization for vertical alignment of nematic liquid crystal

TL;DR: In this paper, anodic alumina and pillar titania structures have been fabricated and used for the vertical alignment of nematic liquid crystals (LCs) for a pore entrance of more than 20 nm in width.
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Novel Photoalignment Method Based on Low-Molecular-Weight Azobenzene Dyes and Its Application for High-Dichroic-Ratio Polarizers.

TL;DR: A novel photoalignment method is proposed, in which an azobenzene dye thin film is deposited by thermal evaporation and in situ exposed to linearly polarized light simultaneously, which obtains polarizers with a dichroic ratio of up to 62, which is the highest value ever realized by a photoAlignment method.
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Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

TL;DR: Based on the distinct effects of oxidizing thermal annealing on the properties of zinc oxide and indium-gallium-zinc oxide (IGZO) under covers of different gas-permeabilities, the elevated-metal metaloxide (EMMO) thin-film transistor (TFT) architecture has been proposed and demonstrated using IGZO as the channel material as mentioned in this paper.
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Characterization of a picosecond CO2 laser system.

TL;DR: The pulse duration of an optical free induction decay picosecond CO2 laser system was modeled and compared to autocorrelation measurements and satisfactory agreement was obtained indicating that pulses as short as 20 psec were produced.