H
Hoi Sing Kwok
Researcher at Hong Kong University of Science and Technology
Publications - 1207
Citations - 32982
Hoi Sing Kwok is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Liquid crystal & Thin-film transistor. The author has an hindex of 77, co-authored 1165 publications receiving 29448 citations. Previous affiliations of Hoi Sing Kwok include University of Hong Kong & University of California, Berkeley.
Papers
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Increasing the rewriting speed of ORW e-paper by electric field
TL;DR: In this article, a new method is proposed to increase the rewriting speed of ORW e-pads by increasing the response time of a liquid crystal display device, like optically rewritable e-papers.
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The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes
Yibo Liu,Ke Zhang,Ke Zhang,Feng Feng,Ka-Wah Chan,Sze-Yan Yeung,Hoi Sing Kwok,Zhaojun Liu,Zhaojun Liu +8 more
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A Novel Envelope Detector Based on Unipolar Metal-Oxide TFTs
Yuming Xu,Bin Li,Sunbin Deng,Yuning Qin,Fan Houbo,Wei Zhong,Yuan Liu,Zhaohui Wu,Fion Sze Yan Yeung,Man Wong,Hoi Sing Kwok,Rongsheng Chen +11 more
TL;DR: A novel ED implementation based on unipolar metal-oxide TFTs that can detect an amplitude shift keying (ASK) signal with a minimum modulation depth of 15% and a maximum envelope rate of 8kbit/s and has a novel topology.
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Optimization of reflective bistable twisted nematic displays with retardation compensation
Zhiliang Xie,Hoi Sing Kwok +1 more
TL;DR: In this paper, the contrast ratios of reflective bistable twisted nematic liquid crystal displays with a rear quarter-wave film are optimized by means of a parameter space approach, by plotting the contrast ratio as a function of the twist angle and thickness-birefringence product (dΔn).
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Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide From the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p + -Nickel-Oxide Heterojunction Diode
TL;DR: In this paper, a heterojunction diode between n-type amorphous indium-gallium-zincoxide (a-IGZO) and p-type nickel oxide (p-Nic oxide) was experimentally demonstrated with self-aligned junction termination.