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Hoi Sing Kwok

Researcher at Hong Kong University of Science and Technology

Publications -  1207
Citations -  32982

Hoi Sing Kwok is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Liquid crystal & Thin-film transistor. The author has an hindex of 77, co-authored 1165 publications receiving 29448 citations. Previous affiliations of Hoi Sing Kwok include University of Hong Kong & University of California, Berkeley.

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Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

TL;DR: In this paper, the effects of ambient pressure and substrate temperature on the structure of cubic aluminum nitride and cubic gallium nitride (GaN) films are systematically investigated and it is shown that the films are amorphous when the temperature and the pressure are too low.
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Fast electro-optical mode in photo-aligned reflective deformed helix ferroelectric liquid crystal cells.

TL;DR: The electrically controlled reflectance has been measured at subkilohertz driving voltage frequency for different polarizations of the incident light and compared quite successfully with the simulation results.
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Silole-containing poly(diphenylacetylene): Synthesis, characterization, and light emission

TL;DR: A disubstituted polyacetylene consisting of a poly(diphenylacetylene) backbone and a 1,2,3,4,5-pentaphenylsilole (SiC4Ph5) pendant was synthesized, and its light emission from both the backbone and the pendant were evaluated as mentioned in this paper.
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A fully self-powered, ultra-stable cholesteric smart window triggered by instantaneous mechanical stimuli

TL;DR: In this article, a fully self-powered, instantaneous-mechanical-stimuli-triggered, normally transparent smart window was developed based on an elaborately tailored cholesteric liquid crystal (LC) and a freestanding sliding triboelectric nanogenerator (FS-TENG).
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High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric☆

TL;DR: In this paper, a self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) utilizing high-k Al 2 O 3 thin film as gate dielectric are developed.