International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Natural organic matter removal by coagulation during drinking water treatment: A review

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

https://iopscience.iop.org/article/10.1088/0034-4885/75/7/076502/pdf

Emerging memories: resistive switching mechanisms and current status.

Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems. We first revie...

https://www.tandfonline.com/doi/pdf/10.1080/23746149.2016.1259585

Neuromorphic computing using non-volatile memory

Polycyclic aromatic hydrocarbons (PAHs) are a large group of organic compounds with two or more fused aromatic rings. They have a relatively low solubility in water, but are highly lipophilic. Most of the PAHs with low vapour pressure in the air are adsorbed on particles. When dissolved in water or adsorbed on particulate matter, PAHs can undergo photodecomposition when exposed to ultraviolet light from solar radiation. In the atmosphere, PAHs can react with pollutants such as ozone, nitrogen oxides and sulfur dioxide, yielding diones, nitro- and dinitro-PAHs, and sulfonic acids, respectively. PAHs may also be degraded by some microorganisms in the soil. PAHs are widespread environmental contaminants resulting from incomplete combustion of organic materials. The occurrence is largely a result of anthropogenic emissions such as fossil fuel-burning, motor vehicle, waste incinerator, oil refining, coke and asphalt production, and aluminum production, etc. PAHs have received increased attention in recent years in air pollution studies because some of these compounds are highly carcinogenic or mutagenic. Eight PAHs (Car-PAHs) typically considered as possible carcinogens are: benzo(a)anthracene, chrysene, benzo(b)fluoranthene, benzo(k)fluoranthene, benzo(a)pyrene (B(a)P), dibenzo(a,h)anthracene, indeno(1,2,3-cd)pyrene and benzo(g,h,i)perylene. In particular, benzo(a)pyrene has been identified as being highly carcinogenic. The US Environmental Protection Agency (EPA) has promulgated 16 unsubstituted PAHs (EPA-PAH) as priority pollutants. Thus, exposure assessments of PAHs in the developing world are important. The scope of this review will be to give an overview of PAH concentrations in various environmental samples and to discuss the advantages and limitations of applying these parameters in the assessment of environmental risks in ecosystems and human health. As it well known, there is an increasing trend to use the behavior of pollutants (i.e. bioaccumulation) as well as pollution-induced biological and biochemical effects on human organisms to evaluate or predict the impact of chemicals on ecosystems. Emphasis in this review will, therefore, be placed on the use of bioaccumulation and biomarker responses in air, soil, water and food, as monitoring tools for the assessment of the risks and hazards of PAH concentrations for the ecosystem, as well as on its limitations.

/pdf/monitoring-of-environmental-exposure-to-polycyclic-aromatic-34edfn0ke5.pdf

Monitoring of environmental exposure to polycyclic aromatic hydrocarbons: a review

This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is discussed.

Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells

A DFM approach considers all interactions in the production flow and breaks the standard local/global context. Understanding existing solutions and their limitations in filling solution for digital blocks, we present in this paper a DFM filler cell solution that takes into account a large amount of problems that can be encountered at many steps of the production flow, such as lithography or planarity variations, while other kinds of filler cells only solve density problems. This allows designs to be less dependent on the global context of the digital block. Our DFM filler cell reduces the STI width stress impact, contains dummy polysilicon gates that allow an OPC-friendly approach and is more flexible for the place and route step. Our approach was validated by a silicon structure and many published data in this domain. The insertion of DFM filler cells is costless in terms of area thanks of their size that are multiple of the grid size. Furthermore, the usage of DFM filler cell in the complete design flow was validated.

Definition of an innovative filling structure for digital blocks : the DFM filler cell

RRAM-based FPGA for “Normally Off, Instantly On” applications

Analog circuit designs are often biased to work in sub-threshold mode with good gate-source voltage matching performances. Depending on the process, hump effect may change the MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for V BS =0V. To model the hump effect, two narrow parasitic MOS are introduced in parallel with the main device. To accurately simulate matching degradation in sub-threshold mode, these parasitic transistors, in case of hump effect, have to be considered.

Impact of hump effect on MOSFET mismatch in the sub-threshold area for low power analog applications

The objective of this paper is to generate an application-oriented test procedure to be used by a FPGA user in a given application General definitions concerning the specific problem of testing RAM-based FPGAs are first given such as the important concept of 'AC-non-redundant fault' Using a set of circuits implemented on a XILINX 4000E, it is shown that a classical test pattern generation performed on the circuit netlist gives a low AC-non-redundant fault coverage and it is pointed out that test pattern generation performed on a FPGA representation is required It is then demonstrated that test pattern generation performed on the FPGA representation can be significantly accelerated by removing most of the AC-redundant faults Finally, a technique is proposed to even more accelerate the test pattern generation process by using a reduced FPGA description

Jean-Michel Portal

Papers

Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells

Definition of an innovative filling structure for digital blocks : the DFM filler cell

RRAM-based FPGA for “Normally Off, Instantly On” applications

Impact of hump effect on MOSFET mismatch in the sub-threshold area for low power analog applications

Analyzing the test generation problem for an application-oriented test of FPGAs