J
Jean-Michel Portal
Researcher at Centre national de la recherche scientifique
Publications - 145
Citations - 2335
Jean-Michel Portal is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Resistive random-access memory & Artificial neural network. The author has an hindex of 25, co-authored 136 publications receiving 2047 citations. Previous affiliations of Jean-Michel Portal include Alternatives & Aix-Marseille University.
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Journal ArticleDOI
Resistive Switching Memory Architecture Based on Polarity Controllable Selectors
Alexandre Levisse,Pierre-Emmanuel Julien Marc Gaillardon,Bastien Giraud,Ian O'Connor,Jean-Philippe Noel,Mathieu Moreau,Jean-Michel Portal +6 more
TL;DR: This paper presents two innovative PCT-based bitcells and proposes an extensive study of their functionality, physical design considerations, and performances in read and write operations compared to CMOS-based 1T1R and 2T1 R bitcells.
Proceedings ArticleDOI
High voltage recycling scheme to improve power consumption of regulated charge pumps
TL;DR: An ultra-low power regulated charge pump system based on charge recycling between a tank capacitor and the charge pump output load capacitor is presented and simulation results show a maximum current reduction of about 38% compared to a conventional regulatedcharge pump system.
Journal ArticleDOI
Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser.
P. Chiquet,Maxime Chambonneau,Vincenzo Della Marca,Jérémy Postel-Pellerin,P. Canet,Sarra Souiki-Figuigui,Guillaume Idda,Jean-Michel Portal,David Grojo +8 more
TL;DR: By comparing the evolution of the electrical characteristics of Flash cells under the cumulative effect of repeated femtosecond laser pulses with first-order physical considerations and TCAD (Technology Computer Aided Design) simulations, the role of the carriers created by nonlinear ionization on the functionality of the structures is established.
Journal ArticleDOI
Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations
Maxime Chambonneau,Sarra Souiki-Figuigui,P. Chiquet,Vincenzo Della Marca,Jérémy Postel-Pellerin,P. Canet,Jean-Michel Portal,David Grojo +7 more
TL;DR: In this article, the authors demonstrate that femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices.
Proceedings ArticleDOI
High density emerging resistive memories: What are the limits?
TL;DR: Two physical IRdrop models for crosspoint and Vertical-RRAM architectures are introduced and it is shown that both periphery overhead and IRdrop limit the crosspoint architecture under 50nm of half pitch.