International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Natural organic matter removal by coagulation during drinking water treatment: A review

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

https://iopscience.iop.org/article/10.1088/0034-4885/75/7/076502/pdf

Emerging memories: resistive switching mechanisms and current status.

Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems. We first revie...

https://www.tandfonline.com/doi/pdf/10.1080/23746149.2016.1259585

Neuromorphic computing using non-volatile memory

Polycyclic aromatic hydrocarbons (PAHs) are a large group of organic compounds with two or more fused aromatic rings. They have a relatively low solubility in water, but are highly lipophilic. Most of the PAHs with low vapour pressure in the air are adsorbed on particles. When dissolved in water or adsorbed on particulate matter, PAHs can undergo photodecomposition when exposed to ultraviolet light from solar radiation. In the atmosphere, PAHs can react with pollutants such as ozone, nitrogen oxides and sulfur dioxide, yielding diones, nitro- and dinitro-PAHs, and sulfonic acids, respectively. PAHs may also be degraded by some microorganisms in the soil. PAHs are widespread environmental contaminants resulting from incomplete combustion of organic materials. The occurrence is largely a result of anthropogenic emissions such as fossil fuel-burning, motor vehicle, waste incinerator, oil refining, coke and asphalt production, and aluminum production, etc. PAHs have received increased attention in recent years in air pollution studies because some of these compounds are highly carcinogenic or mutagenic. Eight PAHs (Car-PAHs) typically considered as possible carcinogens are: benzo(a)anthracene, chrysene, benzo(b)fluoranthene, benzo(k)fluoranthene, benzo(a)pyrene (B(a)P), dibenzo(a,h)anthracene, indeno(1,2,3-cd)pyrene and benzo(g,h,i)perylene. In particular, benzo(a)pyrene has been identified as being highly carcinogenic. The US Environmental Protection Agency (EPA) has promulgated 16 unsubstituted PAHs (EPA-PAH) as priority pollutants. Thus, exposure assessments of PAHs in the developing world are important. The scope of this review will be to give an overview of PAH concentrations in various environmental samples and to discuss the advantages and limitations of applying these parameters in the assessment of environmental risks in ecosystems and human health. As it well known, there is an increasing trend to use the behavior of pollutants (i.e. bioaccumulation) as well as pollution-induced biological and biochemical effects on human organisms to evaluate or predict the impact of chemicals on ecosystems. Emphasis in this review will, therefore, be placed on the use of bioaccumulation and biomarker responses in air, soil, water and food, as monitoring tools for the assessment of the risks and hazards of PAH concentrations for the ecosystem, as well as on its limitations.

/pdf/monitoring-of-environmental-exposure-to-polycyclic-aromatic-34edfn0ke5.pdf

Monitoring of environmental exposure to polycyclic aromatic hydrocarbons: a review

The objective of this paper is to define a minimum number of configurations for testing the configurable modules that interface the global interconnect and the logic cells of SRAM-based FPGAs. In usual SRAM-based FPGAs, Configurable Interface Modules (CIMs) can be found between the global interconnect and inputs of the logic cells (input CIMs) or between output of the logic cells and the global interconnect (output CIMs). It is demonstrated that an input CIM that connects N/sup in/ segments to a logic cell input requires N/sup in/ test configurations and that an output CIM that connects a logic cell output to N/sup out/ segments requires 2 test configurations. Then, it is proven that a set of K/sup in/ input CIMs can be tested in parallel making the number of required test configurations equal to N/sup in/. In the same way, a set of K/sup out/ output CIMs is shown to require only 2 test configurations if N/sup out/>K/sup out/. Finally, it is shown that the complete mXm array of logic cells with K/sup in/ input CIMs and K/sup out/ output CIMs can be tested with only N/sup in/ test configurations using the XOR tree and shift register structures.

Testing the configurable interconnect/logic interface of SRAM-based FPGA's

1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

Emerging non-volatile memories based on resistive switching mechanisms pull intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (namely OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present an compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.

Compact modeling solutions for OxRAM memories

Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells

In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on the modified rate equations with the introduction of a variable related to material melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed, and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.

https://hal.archives-ouvertes.fr/hal-01869957/document

Jean-Michel Portal

Papers

Testing the configurable interconnect/logic interface of SRAM-based FPGA's

1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

Compact modeling solutions for OxRAM memories

Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation