J
Jun Lu
Researcher at Chinese Academy of Sciences
Publications - 3187
Citations - 131399
Jun Lu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Medicine & Computer science. The author has an hindex of 135, co-authored 1526 publications receiving 99767 citations. Previous affiliations of Jun Lu include Drexel University & Argonne National Laboratory.
Papers
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Impaired Circadian Photosensitivity in Mice Lacking Glutamate Transmission from Retinal Melanopsin Cells
TL;DR: Glutamate transmission from the ipRGCs is necessary for normal light entrainment of the SCN at moderate light levels, but residual transmission can weakly entrain animals, although it may be less effective at suppressing locomotor activity (light masking).
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Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films
Jaan Aarik,Jonas Sundqvist,Aleks Aidla,Jun Lu,Timo Sajavaara,Kaupo Kukli,Kaupo Kukli,Anders Hårsta +7 more
TL;DR: Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films are used in this paper for thin film thinning.
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Counter‐Intuitive Structural Instability Aroused by Transition Metal Migration in Polyanionic Sodium Ion Host
Rui Liu,Rui Liu,Shiyao Zheng,Yifei Yuan,Yifei Yuan,Pengfei Yu,Ziteng Liang,Weimin Zhao,Reza Shahbazian-Yassar,Jianxu Ding,Jun Lu,Yong Yang +11 more
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Pd nanoparticles on ZnO-passivated porous carbon by atomic layer deposition: an effective electrochemical catalyst for Li-O2 battery
Xiangyi Luo,Xiangyi Luo,Mar Piernavieja-Hermida,Jun Lu,Tianpin Wu,Jianguo Wen,Yang Ren,Dean J. Miller,Zhigang Zak Fang,Yu Lei,Khalil Amine +10 more
TL;DR: The results suggest that ALD is a promising technique for tailoring the surface composition and structure of nanoporous supports for Li-O2 batteries.
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A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition
Charles L. Dezelah,Oussama M. El-Kadri,Kaupo Kukli,Kai Arstila,Ronald J. Baird,Jun Lu,Lauri Niinistö,Charles H. Winter +7 more
TL;DR: In this article, the atomic layer deposition growth of tungsten nitride films was demonstrated using the precursors W2(NMe2)6 and ammonia with substrate temperatures between 150 and 250 °C.