K
Kevin D. Leedy
Researcher at Air Force Research Laboratory
Publications - 180
Citations - 4270
Kevin D. Leedy is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 31, co-authored 180 publications receiving 3443 citations. Previous affiliations of Kevin D. Leedy include University of Illinois at Urbana–Champaign & Air Force Institute of Technology.
Papers
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Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
TL;DR: In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.
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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak,Neil Moser,Andrew J. Green,Dennis E. Walker,Stephen E. Tetlak,Eric R. Heller,Antonio Crespo,Robert C. Fitch,Jonathan McCandless,Kevin D. Leedy,M. Baldini,Günter Wagner,Zbigniew Galazka,Xiuling Li,Gregg H. Jessen +14 more
TL;DR: In this paper, a top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate was used to construct fin-array field effect transistors (finFETs).
Journal ArticleDOI
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
Andrew J. Green,Kelson D. Chabak,M. Baldini,Neil Moser,Ryan Gilbert,Robert C. Fitch,Günter Wagner,Zbigniew Galazka,Jonathan Mccandless,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +11 more
TL;DR: Preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using inline-formula LaTeX, as well as power gain, efficiency, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%.
Journal ArticleDOI
Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO
David C. Look,Kevin D. Leedy,Lasse Vines,B. G. Svensson,A. Zubiaga,Filip Tuomisto,D. R. Doutt,Leonard J. Brillson +7 more
TL;DR: In this article, a new theoretical formalism and several different experimental techniques were used to demonstrate that the addition of 1.4 \ifmmode\times\else\texttimes\fi{} 10${}^{21}$-cm${}^{\ensuremath{-}3}$ Ga donors in ZnO causes the lattice to form 1.7 \ifmodes\times \else\ texttimes\fa{}
Journal ArticleDOI
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Adam T. Neal,Shin Mou,Elaheh Ahmadi,James S. Speck,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +11 more
TL;DR: In this paper, a Ge-doped Ga2O3 homoepitaxial material grown by molecular beam epitaxy on (010) Fe-Doped semi-insulating substrates was used for MOSFETs.