Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
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TLDR
In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.Abstract:
A Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) $\beta $ -Ga2O3 substrate. Ga2O3-based metal–oxide–semiconductor field-effect transistors with a 2- $\mu \text{m}$ gate length ( $L_{G})$ , 3.4- $\mu \text{m}$ source–drain spacing ( $L_{\textrm {SD}})$ , and 0.6- $\mu \text{m}$ gate–drain spacing ( $L_{\textrm {GD}})$ were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the OFF-state. The gate-to-drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical limits. Further performance projections are made based on layout, process, and material optimizations to be considered in future iterations.read more
Citations
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Guest Editorial: The dawn of gallium oxide microelectronics
Journal ArticleDOI
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi,Ken Goto,Hisashi Murakami,Yoshinao Kumagai,Akito Kuramata,Shigenobu Yamakoshi,Masataka Higashiwaki +6 more
TL;DR: In this paper, field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-Doped n+-Ga 2O3 (001) substrate.
Journal ArticleDOI
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
References
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Journal ArticleDOI
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Journal ArticleDOI
Power semiconductor device figure of merit for high-frequency applications
TL;DR: In this paper, the authors derived the Baliga high-frequency figure of merit for power semiconductor devices operating in high frequency circuits and showed that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.
Journal ArticleDOI
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki,Kohei Sasaki,Takafumi Kamimura,Man Hoi Wong,Daivasigamani Krishnamurthy,Akito Kuramata,Takekazu Masui,S. Yamakoshi +7 more
TL;DR: In this article, single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field effect transistors were fabricated on a semi-insulating β-Ga 2O3 (010) substrate.
Journal ArticleDOI
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Zbigniew Galazka,Klaus Irmscher,Reinhard Uecker,Rainer Bertram,Mike Pietsch,Albert Kwasniewski,M. Naumann,Tobias Schulz,Robert Schewski,Detlef Klimm,Matthias Bickermann +10 more
TL;DR: In this article, the Czochralski method was used to grow 2 in. diameter β-Ga 2 O 3 single crystals with high free-carrier absorption in the near infrared (NIR) wavelength range.
Journal ArticleDOI
Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Kohei Sasaki,Akito Kuramata,Takekazu Masui,Encarnación G. Víllora,Kiyoshi Shimamura,Shigenobu Yamakoshi +5 more
TL;DR: In this article, N-type Ga2O3 homoepitaxial thick films were grown on β-Ga2O 3(010) substrates by ozone molecular beam epitaxy.