K
Kostya S. Novoselov
Researcher at National University of Singapore
Publications - 442
Citations - 234951
Kostya S. Novoselov is an academic researcher from National University of Singapore. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 115, co-authored 392 publications receiving 207392 citations. Previous affiliations of Kostya S. Novoselov include University of Manchester & Russian Academy of Sciences.
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Electronic phase separation in topological surface states of rhombohedral graphite
Yanmeng Shi,Shuigang Xu,Yaping Yang,Sergey Slizovskiy,S. V. Morozov,Seok-Kyun Son,Servet Ozdemir,Ciaran Mullan,Julien Barrier,Jun Yin,Alexei I. Berdyugin,Benjamin A. Piot,Takashi Taniguchi,Kenji Watanabe,Vladimir I. Fal'ko,Kostya S. Novoselov,A. K. Geim,Artem Mishchenko +17 more
TL;DR: In this paper, it was shown that the bulk electronic states in rhombohedral graphite are gapped and, at low temperatures, electron transport is dominated by surface states, which can be attributed to the emergence of strongly correlated electronic surface states.
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Spontaneous magnetization changes and nonlocal effects in mesoscopic ferromagnet-superconductor structures
TL;DR: In this article, magnetization studies of individual ferromagnet-superconductor (FS) structures of submicron size were conducted and it was found that FS structures change their magnetization spontaneously.
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Graphen: Materialien im Flachland (Nobel‐ Aufsatz)
TL;DR: In this article, the authors erlautern, warum ich (and viele andere) mich davon so sehr habe faszinieren lassen, und den Leser dazu einladen, meine Begeisterung bei der Erforschung of Graphen Materials mitzuerleben.
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Raman 2D-Band Splitting in Graphene: Theory and Experiment
Otakar Frank,Marcel Mohr,Janina Maultzsch,Christian Thomsen,Ibtsam Riaz,Rashid Jalil,Kostya S. Novoselov,Georgia Tsoukleri,John Parthenios,Konstantinos Papagelis,Ladislav Kavan,Costas Galiotis +11 more
TL;DR: In this paper, a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension is presented, showing that the 2D mode excited with 785nm has a complex line-shape mainly due to the contribution of two distinct double resonance scattering processes (inner and outer) in the Raman signal.
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High-temperature electronic devices enabled by hBN-encapsulated graphene
Makars Šiškins,Ciaran Mullan,Seok-Kyun Son,Jun Yin,Kenji Watanabe,Takashi Taniguchi,Davit Ghazaryan,Davit Ghazaryan,Kostya S. Novoselov,Artem Mishchenko +9 more
TL;DR: In this paper, it was shown that hexagonal boron nitride (hBN) encapsulated graphene-based devices are capable of operating in an extended temperature range up to 500°C without noticeable thermally induced degradation when encapsulated by hBN.