K
Kostya S. Novoselov
Researcher at National University of Singapore
Publications - 442
Citations - 234951
Kostya S. Novoselov is an academic researcher from National University of Singapore. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 115, co-authored 392 publications receiving 207392 citations. Previous affiliations of Kostya S. Novoselov include University of Manchester & Russian Academy of Sciences.
Papers
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Journal ArticleDOI
A roadmap for graphene
Kostya S. Novoselov,Vladimir I. Fal'ko,Luigi Colombo,Paul Gellert,M. G. Schwab,Kyoung-Soo Kim +5 more
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
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2D materials and van der Waals heterostructures
TL;DR: Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
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The structure of suspended graphene sheets
Jannik C. Meyer,A. K. Geim,Mikhail I. Katsnelson,Kostya S. Novoselov,Timothy J. Booth,S. Roth +5 more
TL;DR: These studies by transmission electron microscopy reveal that individual graphene sheets freely suspended on a microfabricated scaffold in vacuum or air are not perfectly flat: they exhibit intrinsic microscopic roughening such that the surface normal varies by several degrees and out-of-plane deformations reach 1 nm.
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Control of graphene's properties by reversible hydrogenation: Evidence for graphane
D. C. Elias,Rahul R. Nair,T. M. G. Mohiuddin,Sergey V. Morozov,Peter Blake,Matthew P. Halsall,Andrea C. Ferrari,Danil W. Boukhvalov,Mikhail I. Katsnelson,A. K. Geim,Kostya S. Novoselov +10 more
TL;DR: This work illustrates the concept of graphene as a robust atomic-scale scaffold on the basis of which new two-dimensional crystals with designed electronic and other properties can be created by attaching other atoms and molecules.
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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das,Simone Pisana,Biswanath Chakraborty,S. Piscanec,Srijan Kumar Saha,Umesh V. Waghmare,Kostya S. Novoselov,H. R. Krishnamurthy,Andre K. Geim,Andrea C. Ferrari,A. K. Sood +10 more
TL;DR: This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.