L
Le Si Dang
Researcher at University of Grenoble
Publications - 219
Citations - 7814
Le Si Dang is an academic researcher from University of Grenoble. The author has contributed to research in topics: Photoluminescence & Exciton. The author has an hindex of 38, co-authored 216 publications receiving 7282 citations. Previous affiliations of Le Si Dang include Centre national de la recherche scientifique & Joseph Fourier University.
Papers
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Journal ArticleDOI
Bose-Einstein condensation of exciton polaritons
Jacek Kasprzak,Maxime Richard,S. Kundermann,A. Baas,P. Jeambrun,Jonathan Keeling,Francesca Maria Marchetti,Marzena H. Szymańska,Régis André,Jl Staehli,Vincenzo Savona,Peter B. Littlewood,Benoit Deveaud,Le Si Dang +13 more
TL;DR: A comprehensive set of experiments giving compelling evidence for BEC of polaritons of bosonic quasi-particles are detailed, which indicate the spontaneous onset of a macroscopic quantum phase.
Journal ArticleDOI
High-temperature ultrafast polariton parametric amplification in semiconductor microcavities.
Michele Saba,Cristiano Ciuti,Jacqueline Bloch,V. Thierry-Mieg,Régis André,Le Si Dang,S. Kundermann,A. Mura,Giovanni Bongiovanni,Jl Staehli,Benoit Deveaud +10 more
TL;DR: 105 polaritons occupy the same quantum state during the amplification, realizing a dynamical condensate of strongly interacting bosons which can be studied at high temperature and could be exploited for high-repetition all-optical microscopic switches and amplifiers.
Journal ArticleDOI
Stimulation of Polariton Photoluminescence in Semiconductor Microcavity
TL;DR: In this article, photoluminescence at low temperature is studied for a CdTe-based microcavity tuned to resonance with a quantum well exciton, and two distinct stimulation effects are observed with increasing excitation.
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GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
P. K. Kandaswamy,Fabien Guillot,Edith Bellet-Amalric,Eva Monroy,Laurent Nevou,Maria Tchernycheva,Adrien Michon,François H. Julien,Esther Baumann,Fabrizio R. Giorgetta,Daniel Hofstetter,T. Remmele,Martin Albrecht,Stefan Birner,Le Si Dang +14 more
TL;DR: In this article, the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for inter-band optoelectronics in the near infrared was studied.
Journal ArticleDOI
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
J. Simon,J. Simon,N. T. Pelekanos,Christoph Adelmann,E. Martinez-Guerrero,Régis André,Bruno Daudin,Le Si Dang,Henri Mariette +8 more
TL;DR: In this article, a comparison of the optical properties of ZB and Wz nitride QD's is presented, showing that the nonradiative channels cannot be neglected and have a significant contribution in the photoluminescence (PL) decay time.