Journal ArticleDOI
Impact of surfaces on the optical properties of GaAs nanowires
TLDR
In this article, the effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing Nanowires with or without an AlGaAs capping shell as a function of the diameter.Abstract:
The effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing nanowires with or without an AlGaAs capping shell as a function of the diameter. We find that the optical properties of unpassivated nanowires are governed by Fermi-level pinning, whereas, the optical properties of passivated nanowires are mainly governed by surface recombinations. Finally, we measure a surface recombination velocity of 3 x 10(3) cm s(-1) one order of magnitude lower than values previously reported for (110) GaAs surfaces. These results will serve as guidance for the application of nanowires in solar cell and light emitting devices.read more
Citations
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Journal ArticleDOI
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
Benedikt Mayer,Daniel Rudolph,Joscha Schnell,Stefanie Morkötter,Julia Winnerl,J. Treu,Kai Müller,Gregor Bracher,Gerhard Abstreiter,Gregor Koblmüller,Jonathan J. Finley +10 more
TL;DR: By carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors using core-shell GaAs-AlGaAs nanowires.
Journal ArticleDOI
GaAs/AlGaAs nanowire photodetector.
Xing Dai,Sen Zhang,Sen Zhang,Zilong Wang,Giorgio Adamo,Hai Liu,Yizhong Huang,Christophe Couteau,Christophe Couteau,Christophe Couteau,Cesare Soci,Cesare Soci +11 more
TL;DR: In this paper, a core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature was demonstrated, where built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation.
Journal ArticleDOI
Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires
Chia-Chi Chang,Chun-Yung Chi,Maoqing Yao,Ningfeng Huang,Chun-Chung Chen,Jesse Theiss,Adam Bushmaker,Stephen LaLumondiere,Ting-Wei Yeh,Michelle L. Povinelli,Chongwu Zhou,P. Daniel Dapkus,Stephen B. Cronin +12 more
TL;DR: Results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults, and a significant reduction in surface recombination.
Journal ArticleDOI
III–V nanowire photovoltaics: Review of design for high efficiency
Ray R. LaPierre,A. C. E. Chia,S. J. Gibson,Chris M. Haapamaki,J P Boulanger,R. Yee,P Kuyanov,J. Zhang,N. Tajik,N. Jewell,K. M. A. Rahman +10 more
TL;DR: In this paper, a review of recent developments in nanowire-based photovoltaics (PV) with an emphasis on III-V semiconductors including growth mechanisms, device fabrication and performance results is presented.
Journal ArticleDOI
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
A. Mazid Munshi,D L Dheeraj,Vidar Tonaas Fauske,Dong Chul Kim,Antonius T. J. van Helvoort,Bjørn-Ove Fimland,Helge Weman +6 more
TL;DR: This particular GaAs nanowire/graphene hybrid is anticipated to be promising for flexible and low-cost solar cells, and to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter.
References
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Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties
TL;DR: In this article, the authors summarized some of the essential aspects of silicon-nanowire growth and of their electrical properties, including the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs-Thomson effect for the silicon wire growth velocity.
Journal ArticleDOI
Size-dependent Photoconductivity in MBE-Grown GaN -Nanowires
Raffaella Calarco,Michel Marso,T. Richter,Ali I. Aykanat,R. Meijers,A. v. d. Hart,Toma Stoica,Hans Lüth +7 more
TL;DR: Electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE) is reported, which is sensitively dependent on the column diameter.
Journal ArticleDOI
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D. Spirkoska,Jordi Arbiol,Anders Gustafsson,Sonia Conesa-Boj,Frank Glas,Ilaria Zardo,Matthias Heigoldt,Mhairi Gass,A Bleloch,Sònia Estradé,Michael Kaniber,J. Rossler,Francesca Peiró,Joan Ramon Morante,Gerhard Abstreiter,Lars Samuelson,A. Fontcuberta i Morral,A. Fontcuberta i Morral +17 more
TL;DR: The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented in this paper.