Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region
Anas Elbaz,Anas Elbaz,Riazul Arefin,Emilie Sakat,Binbin Wang,Etienne Herth,Gilles Patriarche,Antonino Foti,Razvigor Ossikovski,Sébastien Sauvage,Xavier Checoury,Konstantinos Pantzas,Isabelle Sagnes,Jérémie Chrétien,Lara Casiez,Mathieu Bertrand,Vincent Calvo,Nicolas Pauc,Alexei Chelnokov,Philippe Boucaud,Frederic Boeuf,Vincent Reboud,Jean-Michel Hartmann,Moustafa El Kurdi +23 more
TLDR
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor compatible approach.Abstract:
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeS...read more
Citations
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Journal ArticleDOI
1D photonic crystal direct bandgap GeSn-on-insulator laser
Hyo-Jun Joo,Youngmin Kim,Daniel Burt,Yongduck Jung,Lin Zhang,Melvina Chen,Samuel Jior Parluhutan,Dong-Ho Kang,Chulwon Lee,Simone Assali,Zoran Ikonic,Oussama Moutanabbir,Yong-Hoon Cho,Chuan Seng Tan,Donguk Nam +14 more
TL;DR: In this article, the authors presented a 1D photonic crystal nanobeam with a very small device footprint of 7 μm2 and a compact active area of ∼1.2 μm.
Journal ArticleDOI
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
Yuanhao Miao,Guilei Wang,Zhenzhen Kong,Buqing Xu,Xuewei Zhao,Luo Xue,Hongxiao Lin,Yan Dong,Bin Lu,Linpeng Dong,Jiuren Zhou,Jinbiao Liu,Henry H. Radamson +12 more
TL;DR: In this article, a review of the recent progress in GeSn CVD growth is presented, including ion implantation, in situ doping technology, and ohmic contacts, GeSn detectors, Gesn transistors, and GeSn transistors.
Journal ArticleDOI
Strain-relaxed GeSn-on-Insulator (GeSnOI) microdisks
TL;DR: In this paper, a dual insulator GeSn-on-insulator (GeSnOI) material platform was developed to produce strain-relaxed GeSn microdisks stuck on a substrate, which achieved three key properties for a highperformance GeSn laser: removal of harmful compressive strain, decent thermal management, and excellent optical confinement.
Journal ArticleDOI
Enhanced GeSn Microdisk Lasers Directly Released on Si
Youngmin Kim,Simone Assali,Daniel Burt,Yongduck Jung,Hyo-Jun Joo,Melvina Chen,Zoran Ikonic,Oussama Moutanabbir,Donguk Nam +8 more
TL;DR: In this paper, a strain-free GeSn microdisk laser device fully released on Si outperforms the canonical suspended devices, allowing to simultaneously relax the limiting compressive strain while offering excellent thermal conduction.
Journal ArticleDOI
GeSnOI mid-infrared laser technology
Binbin Wang,Emilie Sakat,Etienne Herth,Maksym Gromovyi,Andjelika Bjelajac,Julien Chaste,Gilles Patriarche,Philippe Boucaud,Frederic Boeuf,Nicolas Pauc,Vincent Calvo,Jérémie Chrétien,Marvin Frauenrath,Alexei Chelnokov,Vincent Reboud,Jean-Michel Hartmann,Moustafa El Kurdi +16 more
TL;DR: In this paper, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near and mid-infrared spectral range.
References
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Journal ArticleDOI
Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI
Achieving direct band gap in germanium through integration of Sn alloying and external strain
TL;DR: In this paper, a theoretical model was developed based on the nonlocal empirical pseudopotential method to determine the electronic band structure of germanium tin (GeSn) alloys, and modifications to the virtual crystal potential accounting for disorder induced potential fluctuations were incorporated to reproduce the large direct band gap bowing observed in GeSn alloys.
Journal ArticleDOI
Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
TL;DR: In this paper, the authors synthesize up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy.
Journal ArticleDOI
Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
TL;DR: In this paper, the authors investigated the band structure of tensile-strained germanium using a 30 band k⋅p formalism and obtained that the crossover from indirect to direct band gap occurs for a tensile in-plane strain of 1.9%.
Journal ArticleDOI
Optically Pumped GeSn Microdisk Lasers on Si
Daniela Stange,Stephan Wirths,R. Geiger,C. Schulte-Braucks,Bahareh Marzban,Nils von den Driesch,Gregor Mussler,T. Zabel,Toma Stoica,J. M. Hartmann,Siegfried Mantl,Zoran Ikonic,Detlev Grützmacher,Hans Sigg,Jeremy Witzens,Dan Buca +15 more
TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.
Related Papers (5)
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more