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Nuno M. R. Peres
Researcher at University of Minho
Publications - 318
Citations - 53880
Nuno M. R. Peres is an academic researcher from University of Minho. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 64, co-authored 304 publications receiving 48430 citations. Previous affiliations of Nuno M. R. Peres include Max Planck Society & Boston University.
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Journal ArticleDOI
The electronic properties of graphene
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Journal ArticleDOI
Fine Structure Constant Defines Visual Transparency of Graphene
Rahul R. Nair,Peter Blake,Peter Blake,Alexander N. Grigorenko,K. S. Novoselov,Timothy J. Booth,Timothy J. Booth,Tobias Stauber,Tobias Stauber,Nuno M. R. Peres,Nuno M. R. Peres,A. K. Geim +11 more
TL;DR: It is shown that the opacity of suspended graphene is defined solely by the fine structure constant, a = e2/hc � 1/137 (where c is the speed of light), the parameter that describes coupling between light and relativistic electrons and that is traditionally associated with quantum electrodynamics rather than materials science.
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Field-effect tunneling transistor based on vertical graphene heterostructures.
L. Britnell,Roman V. Gorbachev,Rashid Jalil,Branson D. Belle,Fred Schedin,Artem Mishchenko,Thanasis Georgiou,Mikhail I. Katsnelson,Laurence Eaves,Sergey V. Morozov,Nuno M. R. Peres,Nuno M. R. Peres,Jon Leist,Andre K. Geim,K. S. Novoselov,Leonid Ponomarenko +15 more
TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.
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Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Eduardo V. Castro,Kostya S. Novoselov,Sergey V. Morozov,Nuno M. R. Peres,J. M. B. Lopes dos Santos,Johan Nilsson,Francisco Guinea,Andre K. Geim,A. H. Castro Neto,A. H. Castro Neto +9 more
TL;DR: It is demonstrated that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias and can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2.
Journal Article
Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
Eduardo V. Castro,J. M. B. Lopes dos Santos,Nuno M. R. Peres,K. S. Novoselov,S. V. Morozov,A. K. Geim,Francisco Guinea,Johan Nilsson,A. H. Castro Neto +8 more
TL;DR: In this paper, the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias, and the gap can be changed from zero to mid-infrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2.