P
Paul S. Ho
Researcher at University of Texas at Austin
Publications - 481
Citations - 14016
Paul S. Ho is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Electromigration & Dielectric. The author has an hindex of 60, co-authored 475 publications receiving 13444 citations. Previous affiliations of Paul S. Ho include National Institute of Standards and Technology & IBM.
Papers
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Journal ArticleDOI
Electromigration in metals
Paul S. Ho,Thomas Kwok +1 more
TL;DR: In this article, an overview on the current understanding of electromigration in metals is provided. But the discussion is focused on studies in bulk metals and alloys and not on the studies in metallic thin films.
Journal ArticleDOI
Low Dielectric Constant Materials for ULSI Interconnects
TL;DR: In this article, a review of the general requirements for process integration and material properties of low-k dielectrics are discussed, focusing on the challenge in developing materials with low dielectric constant but strong thermomechanical properties.
Journal ArticleDOI
Plasma processing of low-k dielectrics
Mikhail R. Baklanov,Jean-Francois de Marneffe,Denis Shamiryan,Adam Urbanowicz,Hualiang Shi,Tatyana Rakhimova,Huai Huang,Paul S. Ho +7 more
TL;DR: In this article, an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology is presented.
Journal ArticleDOI
Electromigration reliability issues in dual-damascene Cu interconnections
TL;DR: The study of dual-damascene Cu has demonstrated the importance of statistics in analyzing EM reliability and has shown statistical evidence of bimodal failure behavior consistent with the presence of a weak and strong failure mode.
Book
Diffusion Phenomena in Thin Films and Microelectronic Materials
Davendra Gupta,Paul S. Ho +1 more
TL;DR: A comprehensive review of diffusion phenomena in thin films and microelectronic materials can be found in this paper, where anelastic relaxation and diffusion in thin-layer materials are discussed.