R
R.H. Dennard
Researcher at IBM
Publications - 37
Citations - 4356
R.H. Dennard is an academic researcher from IBM. The author has contributed to research in topics: CMOS & MOSFET. The author has an hindex of 21, co-authored 37 publications receiving 4160 citations.
Papers
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Journal ArticleDOI
Device scaling limits of Si MOSFETs and their application dependencies
TL;DR: The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.
Proceedings ArticleDOI
Stable SRAM cell design for the 32 nm node and beyond
Leland Chang,David M. Fried,John M. Hergenrother,Jeffrey W. Sleight,R.H. Dennard,Robert K. Montoye,Lidija Sekaric,Sharee J. McNab,Anna W. Topol,C.D. Adams,Kathryn W. Guarini,Wilfried Haensch +11 more
TL;DR: This work demonstrates the smallest 6T and full 8T-SRAM cells to date and provides a much greater enhancement in stability by eliminating cell disturbs during a read access, thus facilitating continued technology scaling.
Journal ArticleDOI
Generalized scaling theory and its application to a ¼ micrometer MOSFET design
TL;DR: In this paper, a generalized scaling theory was proposed to allow for independent scaling of the FET physical dimensions and applied voltages, while still maintaining constant the shape of the electric field pattern.
Journal ArticleDOI
CMOS scaling for high performance and low power-the next ten years
TL;DR: In this article, a guideline for scaling of CMOS technology for logic applications such as microprocessors is presented covering the next ten years, assuming that the lithography and base process development driven by DRAM continues on the same three-year cycle as in the past.
Patent
High density chip carrier with integrated passive devices
Michael P. Chudzik,R.H. Dennard,Divakaruni Rama,Bruce K. Furman,Rajarao Jammy,Chandrasekhar Narayan,Sampath Purushothaman,Joseph F. Shepard,Anna W. Topol +8 more
TL;DR: In this paper, a carrier for a semiconductor component is provided having passive components integrated in its substrate, such as capacitors and resistors, to provide a close electrical proximity to the supported components.