C. De Santi

TL;DR: In this paper, an extensive analysis of the time and field-dependent trapping processes that occur in GaN-based gate injection transistors exposed to high drain voltage levels is presented.

TL;DR: The results demonstrate that the analyzed devices do not suffer from dynamic ON-resistance problems, and the impact of hard switching on dynamic becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.

TL;DR: In this article, the authors investigated the role of various mechanisms including Shockley-Read-Hall recombination, thermionic escape from the quantum well, phonon assisted tunneling, and thermionic trap-assisted tunneling; in addition, to explain the thermal droop, they proposed a closed-form model which is able to accurately fit the experimental data by using values extracted from measurements and simulations and a limited set of fitting parameters.

TL;DR: In this paper, an extensive analysis of the properties of the deep level responsible for the degradation of InGaN-based laser diodes is presented based on combined optical measurements and Deep-Level Transient Spectroscopy (DLTS) investigation.

TL;DR: In this article, the degradation mechanisms induced by off-state and on-state stress in AlGaN/GaN HEMTs were investigated and the influence of the reverse voltage as degradation accelerating factor was also provided.