There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

Provided is a pixel circuit. The pixel circuit comprises a driving transistor and a light-emitting element both coupled in series between a first level end and a second level end, and comprises a second transistor, a third transistor, a fourth transistor, a first capacitor and a second capacitor. The second capacitor is coupled between a control electrode of the driving transistor and a second end of the light-emitting element. A threshold voltage is stored by the first capacitor, so that threshold voltage compensation for the driving transistor and the light-emitting element is implemented, and therefore the non-uniformity of the display of the pixel circuit is compensated. Also provided is a display device, wherein a first control line and a light-emitting control line are both global lines. Also disclosed is a pixel circuit driving method.

Pixel circuit with compensation for drift of threshold voltage of OLED, driving method thereof, and display device

We used X-ray diffraction(XRD) analyze the property of each PTCDA film which deposited on p-Si（110）substrate in different technological parameter. the result of XRD analysis showed PTCDA thin film which deposited on p-Si（110）substrate growth pattern is crystal. With the increase of the thickness of PTCDA film, there appears α-PTCDA and β-PTCDA in the thin film at the same time. For the sample that PTCDA film evaporatived on p-Si（110）substrate when substrate temperature is 50℃, diffraction peaks is at 2θ≈27.50, diffraction peak position corresponds to the monoclinic (102) lattice plane, PTCDA molecular plane almost parallel to the substrate. For the sample that PTCDA film evaporatived on p-Si（110）substrate when substrate temperature at 100℃, PTCDA molecular grow nearly perpendicular to the surface of substrate. When substrate temperature is 150℃，there is the same situation. The sample is 150℃, the decrease of diffraction peaks intensity may attributed to PTCDA molecular plane in some areas change relative to the substrate plane. With the Increase of the temperature, Increase in Peak position is 0.1, this is attributed to the Increase in the Proportion of β-PTCDA. Peak width at half decreases from 0.494 when substrate temperature is 50℃ to 0.09 when substrate temperature is 150℃. And peak width at half decreases with the peak intensity decreases.

XRD Analysize PTCDA Film Evaporatived on p-Si (110) Substrate

Various thicknesses (0, 5 and 70 nm) TiO 2 :Nb (TNO) films are used for the fabrication of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with Mo/TNO source-drain (S-D) electrodes. All the as-prepared TFTs show similar electrical performance. However, the on-current of a-IGZO TFT with Mo/TNO(5 nm) S-D electrodes decreases dramatically after 300 °C annealing due to the large S-D parasitic resistance. In contrast, the S-D contact remain low for Mo/TNO(70 nm) S-D electrodes by 300 °C annealing.

TiO 2 :Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes

A thin-film transistors (TFTs) integrated gate driver which can work well at low temperature down to <inline-formula> <tex-math notation="LaTeX">$- 40\,\,^{\circ} \text{C}$ </tex-math></inline-formula> is proposed and demonstrated. The carry signal (CN) of the driver, being generated through the voltage bootstrapping approach using a CN-connected capacitor, is used to pre-charge the following stage of the driver. As the rising and falling time of CN is much shorter than that of the gate driving signal GN, the bootstrapping voltage is increased and voltage loss of the pre-charge transistor can be much reduced, to avoid the driver’s malfunction at low temperature. This structure further benefits maintaining the driving speed over long operation time at high temperature. On the other hand, the GN, instead of CN, is used to reset the gate driver to suppress the voltage feed-through effects. One single stage of the driver consists of 11 TFTs and 2 capacitors, driven by 4 clock signals with the duty ratio of 25%. An a-Si:H TFTs implemented single stage circuit of the driver occupies an area of 250 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}\times 1099\,\,\mu \text{m}$ </tex-math></inline-formula>. Measurements show that the output voltage magnitude can be maintained well when temperature varies from <inline-formula> <tex-math notation="LaTeX">$- 40\,\,^{\circ} \text{C}$ </tex-math></inline-formula> to 80 °C. Moreover, the rising-time and falling-time increase of the output pulse are both less than <inline-formula> <tex-math notation="LaTeX">$3~\mu \text{s}$ </tex-math></inline-formula> after 240 hours of the accelerated high temperature aging operations.

https://ieeexplore.ieee.org/ielx7/6287639/6514899/09875286.pdf

A-Si TFT Integrated Gate Driver Workable at −40°C Using Bootstrapped Carry Signal

The invention discloses a photoelectric sensor and a display panel. The photoelectric sensor and the display panel comprise a pulse transmission unit which comprises a control terminal, with the control terminal of the pulse transmission unit obtaining a driving voltage and then transmitting a first clock signal to a signal output port; a pulse control unit for receiving an inputted scan signal from a signal input port and charging a control terminal of the pulse transmission unit to supply the drive voltage; a photoelectric induction unit used for providing a leakage current responsive to theintensity of the external illumination when receiving the external illumination, and discharging the leakage current to the control terminal of the pulse transmission unit so that the voltage of thecontrol terminal of the pulse transmission unit is smaller than the driving voltage after a period of time. The proposed photoelectric sensor circuit utilizes the existing scanning signal and clock signal of the conventional display panel, and does not need to introduce additional control signal. Therefore, the circuit structure is simple, and is more suitable for integration on the display panel.In addition, the pulse control unit and the photoelectric sensing unit are the same unit, which improves the device saving.

Shengdong Zhang

Papers

Pixel circuit with compensation for drift of threshold voltage of OLED, driving method thereof, and display device

XRD Analysize PTCDA Film Evaporatived on p-Si (110) Substrate

TiO 2 :Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes

A-Si TFT Integrated Gate Driver Workable at −40°C Using Bootstrapped Carry Signal

A photoelectric sensor and a display panel