Shengdong Zhang

TL;DR: In this article, a dual barrier structure for Germanium MOSFET applications is proposed, where the source/drain region is composited with dual stacked germanide layers, and different barrier heights are hence formed.

TL;DR: In this article, a co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated.

TL;DR: In this article, the influence of deposition conditions on the electrical characteristics of thin films deposited by direct current (DC) sputtering was investigated for the first time, and the results showed that with the increase of oxygen partial pressure, depositing temperature and DC power, the conduction type of SnO.............. x.............. thin film switches from p-type to n-type.

TL;DR: In this article, the authors investigated the effect of physical parameters on the performance of nanowire transistors with triangular cross sections (TNWTs) and found that TNWTs have larger cross section than inscribed circle nanowires, thus exhibiting higher drain current and cutoff frequency.

TL;DR: In this paper, the authors presented a pixel device with a luminescent device, a programming module, a threshold-voltage extraction module, and a driving module, wherein the programming module charges the first capacitor by means of the data signal and the reference signal, and the driving module drives the luminescence device to emit light by using the driving voltage provided by the supply voltage and the capacitor module through the second transistor.