There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

We have studied processing and characteristics of flexible Aluminum-doped Zinc Oxide thin-film transistors (AZO TFTs) fabricated on plastic substrates using radio frequency (rf) magnetron sputtering. To improve the performance of flexible AZO TFT, we studied effects of device structures on characteristics of the aluminum-doped zinc oxide thin film transistors. The electrical properties of top-gate type and bottom-gate type AZO TFTs were investigated, respectively. The top-gate type AZO TFTs shows a threshold voltage of 1.4 V, a I on /I off current ratio of 1.0×10 7 , a field effect mobility of 28.2 cm 2 / V•s, a subthreshold swing of 0.19 V/decade. And the bottom-gate type AZO TFTs shows a threshold voltage of 1.7 V, a I on /I off ratio of 1.0×10 7 , a field effect mobility of 209 cm 2 / V•s, a subthreshold swing of 0.16 V/decade, and the off current of less than 10 -11 A at room temperature. Both TFTs show low threshold voltage, high I on /I off ratio and high field effect mobility. By comparison, the bottom-gate type AZO TFTs shows better characteristics. The flexible AZO-TFT is a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics due to flexible, transparency, high mobility, and low-temperature processing.

Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates

Thin film transistors (TFTs) with Gadolinium-doped Aluminum-Zinc-Oxide (Gd-AZO) thin film as the active layer were fabricated on glass substrate at room temperature. Amorphous Gd-AZO crystal structure which is benefit for high performance devices was obtained. The variation trend of TFTs properties with O 2 partial pressure was investigated. Excellent negative bias stress stability and transmittance Gd-AZO TFTs was realized, too. The ultimate TFT has excellent properties such as a saturation mobility of 238 cm2/V·s, an on-to-off current ratio of 6.08×108, a threshold of 1.92V, and a sub-threshold swing of 161 mV/decade.

High negative bias stability Gadolinium-doped Aluminum-Zinc-Oxide thin film transistors

In this paper, the effect of the nonself-aligned process on the performance variation of a bottom-gate metal oxide semiconductor (MOS) transistor is discussed using a device simulator. The simulation results predict that the nonself-aligned bottom-gate MOS transistor cannot be scaled into the deep submicron regions. A simple fully self-aligned bottom-gate (FSABG) metal oxide semiconductor field effect transistor (MOSFET) technology is then proposed and developed. A new technique for forming thermal oxide on poly-Si serving as the bottom-gate dielectric is also investigated. It is found that the quality of the oxide on the poly-Si recrystallized by the metal induced uni-lateral crystallization (MIUC) is much higher than that by the solid phase crystallization (SPC). Deep submicron fully self-aligned bottom-gate pMOS transistors are fabricated successfully using the proposed technology. The experimentally measured results indicate the device performances depend strongly on the channel-width, and get comparable to that of a single crystal MOSFET if the channel width is less than 0.5/spl mu/m. The effects of the channel width on the device performances are discussed. In addition, the experimental results also confirm that the proposed technology has a good control of the channel film thickness.

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

High-performance fully transparent Hafnium-doped Zinc Oxide Thin Film Transistors (HZO TFTs) were successfully fabricated on glass substrate at Low Temperature. Effects of the oxygen partial pressure on characteristics of HZO TFTs were studied. We achieved the optimum oxygen partial pressure condition and fabricated high-performance fully transparent HZO TFTs. We also demonstrated the uniformity of TFTs on the whole glass. Furthermore, we also studied Ti-doped Zinc Oxide TFTs and Tin-doped Zinc Oxide TFTs at the same time, which are proven to be promising. Besides, our group also studied Ti-doped Zinc Oxide TFTs and Tin-doped Zinc Oxide TFTs at the same time.

P‐15: High‐Performance Fully Transparent Hafnium‐Doped Zinc Oxide TFTs Fabricated at Low Temperature

The present application discloses a shift register and units thereof, wherein low voltage level maintaining module (30) includes: a first maintaining unit (31) and a second maintaining unit (32), configured to maintain a signal output terminal and/or the controlling terminal (Q) of the driving module (20) at low voltage level when an effective level is received. A threshold voltage sensing module (40) is coupled between the first maintaining unit (31) and the second maintaining unit (32), the threshold voltage sensing module (40) is configured to control its signal output terminal to provide an effective level to the second maintain-enabling terminal (P2) according to threshold voltage shift of the first maintaining unit (31) sensed. Therefore, low voltage maintaining module (30) may endure a greater threshold voltage shift, and the life span of the circuit is extended. The present application further discloses a display device and a voltage regulating circuit.

Shengdong Zhang

Papers

Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates

High negative bias stability Gadolinium-doped Aluminum-Zinc-Oxide thin film transistors

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

P‐15: High‐Performance Fully Transparent Hafnium‐Doped Zinc Oxide TFTs Fabricated at Low Temperature

Shift register, unit thereof, and display device