There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

9-3: Advanced Process and Structure of Backplane for Micro LED Display

A voltage-programmed a-IGZO TFT pixel circuit for AMOLED display systems is proposed in this paper. Compensation schemes together with a simple driving strategy are proposed for threshold voltage shift and mobility variations of the driving TFT, as well as the OLED degradation. Simulation results indicate that the current error rates (CERs) are reduced to lower than 11.9% when the mobility variation of the driving TFT is ±30%, and 8.1% when the threshold voltage shift of the driving TFT is ±0.5 V, for the entire data input range.

An a-IGZO TFT Pixel Circuit for AMOLED Display Systems With Compensation for Mobility and Threshold Voltage Variations

Fully transparent aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were successfully fabricated on glass substrates at room temperature. Superior properties, such as a high saturation mobility of 59.3 cm2 V−1 s−1, a positive threshold voltage of 1.3 V, a steep subthreshold swing of 122.9 mV/dec, an off-state current on the order of 10−12 A, and an on/off ratio of 2.7 × 108, were obtained. The electrical properties of the AZO TFTs were successively studied within a period of six months. Small property degenerations could be observed from the test results obtained within the study period, which proved the high-performance and high-stability characteristics of AZO TFTs. Furthermore, hysteresis loop scanning of AZO TFTs was performed, and a small hysteresis could be detected in the scanning curves, which suggested the superior properties of a dielectric and a channel-insulator interface. Lastly, we succeeded in manufacturing an organic LED (OLED) flat panel display panel driven by AZO TFTs and obtained an excellent display effect from it. We believe that AZO TFTs are a promising candidate successor to Si-based TFTs in next-generation flat panel displays.

https://iopscience.iop.org/article/10.7567/JJAP.53.04EJ07/pdf

Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors

The invention relates to a drive unit and a drive device. The drive unit includes a register module, a plurality of output modules, and a plurality of pull-down branches, wherein the register module is configured to generate mutually opposite first control signal and second control signal under the influence of a first low frequency clock signal; each output module includes an output branch, and is configured to generate an output signal related with a high frequency clock signal received by a driving transistor under the influence of the first control signal; and the plurality of pull-down branches are coupled to the output branches, and are configured to maintain a plurality of nodes corresponding to the output branches at the corresponding low potential.

Integrated gate drive circuit and display equipment

A thin-film transistor (TFT) integrated gate driver is proposed for compact in-cell touch display, where one capacitor is reused for both turning on low-level maintaining transistors via voltage coupling and maintaining the re-start charge during the touch sensing period. The gate terminal of buffer transistor is thus free of electrical stress during touch sensing period, and can be re-charged for the subsequent re-start period, leading to minimal variations in the transient response. With the capacitor reusing scheme and a capacitor stacking structure, the area of the single stage gate driver is decreased to $645\,\,\mu \text{m}\,\,\times 210\,\,\mu \text{m}$ . The fabricated a-Si TFT gate driver with 8 cascaded stages shows that the rising and falling time variations among re-start and normal gate driver stages are less than $1~\mu \text{s}$ . Versatile touch sensing modes and bidirectional scanning functions are verified.

/pdf/capacitor-reused-gate-driver-for-compact-in-cell-touch-2aubggtz2t.pdf

Shengdong Zhang

Papers

9-3: Advanced Process and Structure of Backplane for Micro LED Display

An a-IGZO TFT Pixel Circuit for AMOLED Display Systems With Compensation for Mobility and Threshold Voltage Variations

Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors

Integrated gate drive circuit and display equipment

Capacitor Reused Gate Driver for Compact In-Cell Touch Displays