There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

A gate driver circuit with simplified structure is presented in this paper. The proposed design features sharing low-level-holding structure. The number of TFTs is reduced almost by 50% compared with the conventional one and the circuit is of high reliability, besides the special dummy stage is not needed by using the proposed structure.

http://ieeexplore.ieee.org/iel7/7054076/7061065/07061225.pdf

A concrete integrated gate driver with sharing low-level-holding structure

The modeling study of gate-bias-stress-induced threshold voltage shift (ΔV th ) in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) is reported. According to the total number of tunneled carriers and the probability in tunneling, saturated ΔV th is obtained, and the impact of electric field in gate insulator on the ΔV th is also incorporated in this model. The result shows that the model is able to predict the ΔV th of IGZO TFT under a positive gate stress. The dependence of the ΔV th on the initial conditions is also analyzed in this paper.

A gate-stress-induced ΔV th model reflecting impact of electric field in IGZO thin film transistors

Dual Multi-scale Dehazing Network

Designs and fabrication of a FinFET are provided. In one implementation, the fabrication can include forming a dielectric stripe on a substrate; implanting ions to the substrate by using the dielectric stripe as a mask so as to convert a surface layer of the substrate to an amorphous layer; forming an amorphous semiconductor layer on the substrate covering the dielectric stripe and recrystallizing each of the amorphous layer and the amorphous semiconductor layer to be a monocrystalline layer; processing regions beside two ends of the dielectric stripe to form a protective layer, the regions being predesigned as source and drain regions; forming recrystallized semiconductor spacers at two sides of the dielectric stripe uncovered by the protective layer, and forming recrystallized semiconductor blocks on regions covered by the protective layer; removing the dielectric stripe between the spacers so that the spacers can be formed as Fin bodies.

Shengdong Zhang

Papers

A concrete integrated gate driver with sharing low-level-holding structure

A gate-stress-induced ΔV th model reflecting impact of electric field in IGZO thin film transistors

Dual Multi-scale Dehazing Network

Dual-gate FinFET

P‐108: Oxide Thin Film Transistors Integrated DC‐DC Converter with High Efficiency for Passive RFID Tag