S
Shengdong Zhang
Researcher at Peking University
Publications - 515
Citations - 5004
Shengdong Zhang is an academic researcher from Peking University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 30, co-authored 479 publications receiving 3806 citations. Previous affiliations of Shengdong Zhang include China-Japan Friendship Hospital & Hong Kong University of Science and Technology.
Papers
More filters
Patent
Display system with feedback channel
TL;DR: In this paper, a display system with a feedback channel is described, where the control end of the feedback channel receives a gating signal and is used for gating the channel.
Journal ArticleDOI
A Quantum Dot Polarizer for Liquid Crystal Displays With Much Improved Efficiency and Viewing Angle
Lixuan Chen,Xiao Wei Sun,Miao Zhou,Xin Zhang,Song Zihang,Yaqian Hou,Xulin Lin,Jinyang Zhao,Shui Chih Alan Lien,Shengdong Zhang +9 more
TL;DR: In this article, a down-conversion polarizer with quantum dots (QDs) integrated is designed for liquid crystal displays (LCDs) by a special optical microstructure design between Polyvinyl Alcohol (PVA) and QDs layers.
Journal ArticleDOI
Manipulation of epsilon-near-zero wavelength for the optimization of linear and nonlinear absorption by supercritical fluid.
TL;DR: In this paper, supercritical fluid (SCF) technology was introduced to epsilon-near-zero (ENZ) photonics for the first time and experimentally demonstrated the manipulation of the ENZ wavelength for the enhancement of linear and nonlinear optical absorption in ENZ indium tin oxide (ITO) nanolayer.
Journal ArticleDOI
Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors
TL;DR: In this paper, a numerical simulation of the dual-gate organic thin film transistors (DG-OTFTs) was performed and it was revealed that the double-gate architecture is able to dynamically control the threshold voltage by coupling of the top/bottom gates.
Journal ArticleDOI
An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors
Guan-Fu Chen,Hong-Chih Chen,Ting-Chang Chang,Shin-Ping Huang,Hua-Mao Chen,Po-Yung Liao,Jian-Jie Chen,Chuan-Wei Kuo,Wei-Chih Lai,Ann-Kuo Chu,Sung-Chun Lin,Cheng-Yen Yeh,Chia-Sen Chang,Cheng-Ming Tsai,Ming-Chang Yu,Shengdong Zhang +15 more
TL;DR: In this article, the authors clarified the correct transmission mechanism of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device and revealed that the curve stretch-out behavior of the sub-threshold region is due to the leakage of the Poole-Frenkel region.