There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

High-performance Self-aligned top-gate thin film transistors with dual-channel have been successfully fabricated on glass substrate. The dual-layer channel is composed of In 2 O 3 and IGZO layers. The introduction of the In 2 O 3 thin layer greatly improves the electrical characteristics of the self-aligned top-gate thin film transistors. In comparison, the dual-channel TFT shows higher filed-effect mobility (34.3cm2/Vs) than single-layer a-IGZO TFT (10.2cm2/Vs). Apart from that we obtain an on/off current ratio of 106, a steep subthreshold swing voltage of 0.44V/decade and a threshold voltage of −3.35V. This enhancement can be attributed to the In 2 O 3 thin layer which offers a higher carrier concentration, thereby maximizing the charge accumulation, generating high carrier mobility and turning the threshold voltage negative.

High mobility metal-oxide thin film transistors with IGZO/In 2 O 3 dual-channel structure

A manufacturing method of a FinFET transistor is provided, comprising: growing a dielectric strip on a substrate(1); using the dielectric strip as a mask to perform ion implantation, thereby forming an amorphous layer(4) on the surface of the substrate; growing an amorphous semiconductor layer which covers the dielectric strip on the substrate(1), and performing thermal annealing treatment, then recrystalizing it to a single crystal semiconductor layer; correspondingly treating both ends of the dielectric strip which are pre-designed as source and drain regions, to form source and drain regions; forming recrystal semiconductor sidewalls on both sides where the dielectric strip does not contact the source and drain regions; removing the dielectric strip between the sidewalls to form a fin body(6); growing a sacrificial layer(7) on the substrate(1) and the fin body(6)，and forming protection sidewalls(8) on the both sides of the fin body(6), and then performing oxidation treatment to isolate the fin body(6) from the substrate(1); removing the protection sidewalls (8) and the sacrificial layer (7); and forming a gate dielectric layer (10) and a gate electrode (11). The Fin body thickness of the manufacturing method can be controlled according to the actual need, especially suitable for manufacturing the transistors with the high requirement of the Fin body size.

Manufacturing method of finfet transistor

Since ZnSnO Thin-Film Transistors (a-ZTO TFTs) are sensitive to the ZTO/GI interface, the crude quality of interface causes a series of problems. So we creatively used three methods to optimize the ZTO/GI interface. First, N2O plasma treatment applied to the gate insulator availably increases mobility (μsat) and restrains the instability. Second, when the rf sputtering power of active layer was reduced only near the interface, SSsat significantly decreased, although μsat and stability is a little degraded. Thirdly, the increasement of rf sputtering oxygen content can obviously optimize SSsat, following with the acceptable deterioration of μsat. Combining the three effective ways mentioned aboved, the result shows that the fabricated TFTs has μsat of 4.5±0.5 cm2/V∙s, a SSsat of 0.5±0.05 V/decade, and acceptable electrical stress stability under both positive and negative biases.

Optimization of the ZTO/GI interface of Bottom-gate Amorphous ZnSnO Thin-Film Transistor

P-1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

A novel row-division (RD) driving scheme together with a new AMOLED pixel circuit are proposed. The RD method can effectively increases the OLED emission time compared with the simultaneous emission method while retaining the prevalent simple pixel structure. In addition, the proposed pixel circuit, can not only effectively compensate for the threshold-voltage shift of the driving TFT and OLED, but also make OLED bias under negative stress in the non-emitting period to achieve an extended life expectancy.

Shengdong Zhang

Papers

High mobility metal-oxide thin film transistors with IGZO/In 2 O 3 dual-channel structure

Manufacturing method of finfet transistor

Optimization of the ZTO/GI interface of Bottom-gate Amorphous ZnSnO Thin-Film Transistor

P-1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

P-46: Row-Division Driving Scheme for Active Matrix OLED Displays