There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SINX encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201970040

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019).

Capped trimming hard-mask (CTHM) patterning technique has been developed based on standard materials and processing equipments. By using the CTHM technique, sub-50nm feature sized pattern can be realized based on 0.5μm lithography technology. Imaging layer for capping and hard-mask layer shoul d have different etching selectivity and good contiguity to each other. Good control of trimming etching and hard-mask etching processes enable patterning of features with ultra-small dimension.

A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits

P-47: An OLEDoS Pixel Circuit with Extended Data Voltage Range for High Resolution Micro-Displays

High-performance full transparent bottom-gate type tin-doped zinc oxide thin-film transistors (TZO TFTs) had been successfully fabricated by RF magnetron sputtering on glass substrates at low temperatures. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated and an optimised growing condition (O2/Ar gas flow ratio: 8/92) for TZO film as the channel layer was acheived. Excellent device performance was obtained, with a low off-state current (I off) of 10−12 A, a high on/off current ratio of 5 × 107, a high saturation mobility (μ s) of 57 cm2/Vs, a steep subthreshold slope of 0.507 V/decade and a threshold voltage (V th) of 3.5 V. These results highlight that excellent device performance can be realised in TZO film and TZO TFT is a promising candidate for transparent flat panel display.

High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures

This invention provides a Schottky potential barrier MOS transistor characterizing that the source region and the drain region of said MOS transistor are composed of two layers of metals or compounds formed by metals and semiconductors, the process method of which is compatible with the traditional one and only adds the low energy ionic injection to increase the performance greatly.

Shengdong Zhang

Papers

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019).

A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits

P-47: An OLEDoS Pixel Circuit with Extended Data Voltage Range for High Resolution Micro-Displays

High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures

Schockley barrier MOS transistor and its manufacturing method