There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

An on-chip compensation system which is composed of an analog voltage adder and an 8-bit R-C digital-to-analog converter (DAC) is proposed for active matrix organic light-emitting diode (AMOLED) display drivers. The proposed analog voltage adder uses two groups of rail-to-rail input MOSFETs, which can work alternately, thereby extending the effective driving time (EDT) to 100%. The 8-bit R-C DAC is composed of a 5-bit R-DAC and a 3-bit C-DAC. The 3-bit C-DAC shares the capacitors with the analog voltage adder, reducing the layout area by 65% compared to the conventional method. This work is implemented in an industrial 0.18-μm CMOS technology. The measurement results show that the maximum INL of the system is 0.254 LSB, while the maximum DNL is 0.506 LSB. The layout area is only 9180 μm2 per channel.

A Compensation System using Analog Voltage Adder with Continuous Output for AMOLED Display Drivers

This paper reports the implementation of the bottomgate MOSFET which possesses the following fully-selfaligned structural features: 1) self-aligned source/drain to bottom-gate; 2) self-aligned thick source/drain to thin channel; 3) self-aligned and mask-free lightly-dopeddrain (LDD). The complete self-alignment is realized by combining a conventional ion implantation and a subsequent CMP step. The process is applied to the poly-Si film, which is crystallized from an a-Si film deposited by LPCVD using Metal-Induced Uni-lateral Crystallization (MIUC) technique and is grain-enhanced further in a high temperature annealing step. Deep submicron Fully Self-Aligned Bottom-Gate (FSABG) PMOS transistors with channel length less than 0.5 µ ma re fabricated. The measured performance parameters include threshold voltage of -0.43V, subthreshold swing of 113 mV/dec, effective hole mobility of 147 cm 2 /V-s, off-current of 0.17 pA/µm and on-off current ration of 7.1 × 10 8 .

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

1.3: An Evaluation Method of TFT Integrated Gate Driver for UHD Display

In this paper, we present a novel pixel structure with internal compensation function for a-IGZO TFTs OLED displays. Because of pixel circuit need more than two gate signals, the global luminous driver scheme was carried out though turning the pixels’ gate signals, except for scan signal, are provided by source IC instead of GOA circuit. A simple GOA circuit was used to provide the scan signal for data writing just 2 mm layout length. Due to the gate signals of INI and REF are provided by source IC, and required to open all pixels in the whole panel at the same time, the driving loading of INI and REF signals are too large to maintain the high brightness uniformity. Experiment results shown that the brightness uniformity of OLED displays can up to 84% by lowering the VGH voltage of INI and REF with weak feedthrough effect.

Shengdong Zhang

Papers

A Compensation System using Analog Voltage Adder with Continuous Output for AMOLED Display Drivers

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

1.3: An Evaluation Method of TFT Integrated Gate Driver for UHD Display

A novel a-IGZO TFT pixel circuit for flexible AMOLED displays with narrow bezel

P-1.5: High-Voltage characteristics of Top-Gate Amorphous InGaZnO Thin-Film Transistors