There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

P‐27: A Novel Pixel Circuit with Threshold Voltage Variation Compensation in Three‐Dimensional AMOLED on Silicon Microdisplay

Using density functional theory calculations with van der Waals (vdW) corrections, we investigate the strain effect on electronic properties of arsenene/graphene bilayer heterostructure. It is demonstrated that the transitions from n-type doping to p-type doping of arsenene occurs when the biaxial strain is applied from -10% to 10%, which origins from the vdW interactions between arsenene and graphene. Moreover, the strain can also induce tunable bandgap of arsenene from 0.41 eV to 1.80 eV.

Strain Effect on Electronic Properties of Arsenene/Graphene Heterostructure

P-8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors

As a basic block of carbon materials with different dimensions, graphene has shown great potential in novel device field. As a result, it becomes extremely important to break the zero-band-gap status of graphene sheet. In this work, the density functional theory (DFT) has been carried out to calculate the electronic structure of La-doped monolayer graphene under both X-direction uniaxial and Y-direction uniaxial strain. It turns out that both tensile uniaxial strain along the X-direction and compressive strain along the Y-direction help to broaden bandgap in La-doped graphene sheet. In addition, the La-doped graphene could get a biggest band gap while these two kinds of uniaxial strains are given to be 12% and −9%, respectively.

Shengdong Zhang

Papers

P‐27: A Novel Pixel Circuit with Threshold Voltage Variation Compensation in Three‐Dimensional AMOLED on Silicon Microdisplay

Strain Effect on Electronic Properties of Arsenene/Graphene Heterostructure

P-8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors

Strain effect on electronic structure of La-doped monolayer graphene

P‐100: Enhanced Luminescence by Multi ‘A’ Site Cations Strategy and Potassium Doping for Solution‐Processed Perovskite Light‐Emitting Diodes