There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Leu-M

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Zinc-ion batteries built on water-based electrolytes featuring compelling price-points, competitive performance, and enhanced safety represent advanced energy storage chemistry as a promising alternative to current lithium-ion battery systems. Attempts to develop rechargeable aqueous zinc-ion batteries (ZIBs) can be traced to as early as the 1980s; however, since 2015, the research activity in this field has surged throughout the world. Despite the achievements made in exploring electrode materials so far, significant challenges remain at the material level and even on the whole aqueous ZIBs system, leading to the failure of ZIBs to meet commercial requirements. This review aims to discuss how to pave the way for developing aqueous ZIBs. The current research efforts related to aqueous ZIBs electrode materials and electrolytes are summarized, including an analysis of the problems encountered in both cathode/anode materials and electrolyte optimization. Some concerns and feasible solutions for achieving practical aqueous ZIBs are discussed in detail. We would like to point out that merely improving the electrode materials is not enough; synergistic optimization strategies toward the whole battery system are also deeply needed. Finally, some perspectives are provided on the subsequent optimization design for further research efforts in the aqueous ZIB field.

Issues and opportunities facing aqueous zinc-ion batteries

A new back-channel-etched process for the fabrication of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is demonstrated, in which a conductive Nb doped TiO
 2
 (TNO) thin film is used to serve as protective layer for the a-IGZO active layer. It is shown that the TNO film provides the active layer with excellent protection even when the thickness is only 1 nm. With treatment by N
 2
O plasma +200°C annealing, the conductive TNO can be converted into an insulator to serve as an in situ passivation layer. Besides, by the introduction of the TNO layer, the source-drain parasitic resistance of the BCE process fabricated TFTs is significantly reduced and the positive bias stress stability is improved as well.

Nb Doped TiO2 Protected Back-channel-etched Amorphous Ingazno Thin Film Transistors

Mini-LED backlight units on glass for 75-inch 8K resolution liquid crystal display

The performance and stability improvement of back-channel-etched amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs) by post CF4+O2 plasma treatment is investigated. It is revealed that the metal residue of the wet-etching of source/drain electrodes degrades TFT performance and aggravates the positive threshold voltage ( $V_{\mathrm {th}})$ shift under positive gate bias stress. It is demonstrated that the CF4+O2 plasma treatment effectively removes the metal residue and remarkably improves device performance and the $V_{\mathrm {th}}$ stability. This improvement is attributed to oxygen vacancy repairing at the back channel interface of the a-IGZO TFT by the O free radicals generated by the O2 plasma.

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

The application discloses an organic light-emitting diode panel, a gate electrode driving circuit and units thereof. The units of the gate electrode driving circuit comprise a scanning signal generation unit (31) and a light-emitting signal generation unit (32). The scanning signal generation unit (31) is used for generating a scanning signal (Vscan), and transmits a first clock signal (VA) to a scanning signal output end under the control of a pulse signal (VIN) and pulls down voltage of the scanning signal output end to maintain the voltage to be low-level under the control of a second clock signal (VB). The light-emitting signal generation unit (32) is used for generating a light-emitting signal (VEM), and pulls down voltage of a light-emitting signal output end under the control of the pulse signal (VIN) and charges the light-emitting signal output end under the control of the second clock signal (VB). The scanning signal Vscan and the light-emitting signal VEM are generated in the gate electrode driving circuit and the units thereof simultaneously. Bedsides, the structure is simple, driving capacity is high and application range is wide.

Organic light-emitting diode panel, gate electrode driving circuit and units thereof

Threshold voltage shift ( $\Delta V_{\mathrm{ TH}}$ ) effect of hydrogenated amorphous silicon thin-film transistors under bipolar pulse bias stress (BPBS) is investigated. The dependence of the $\Delta V_{\mathrm{ TH}}$ effect on the signal pulsewidth, stress temperature, and negative pulse voltage magnitude of the BPBS is systematically measured, and explained by the charge trapping and detrapping theory. Results show that the BPBS leads to a noticeably suppressed $\Delta V_{\mathrm{ TH}}$ , compared with the conventional unipolar pulse bias stress. It is suggested that the BPBS with proper negative pulse voltage magnitude and low pulse frequency is an effective way of suppressing $\Delta V_{\mathrm{ TH}}$ , especially when the thin-film transistors work relatively at high temperature.

Shengdong Zhang

Papers

Nb Doped TiO2 Protected Back-channel-etched Amorphous Ingazno Thin Film Transistors

Mini-LED backlight units on glass for 75-inch 8K resolution liquid crystal display

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Organic light-emitting diode panel, gate electrode driving circuit and units thereof

Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias