Shengdong Zhang

TL;DR: In this paper, an in situ passivation process for the fabrication of high-performance indium-tin-oxide thin-film transistors (ITO TFTs) is demonstrated, in which a localized anodic oxidization (anodization) technique is used to convert the metal Ta film on a channel layer into a Ta2O5 film to form a channel passivation layer.

TL;DR: In this paper, a fabrication process for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the S/D regions are induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, with the channel region protected from back etching by depositing and patterning a protective layer.

TL;DR: A back channel anodization (BCA) process for fabrication of amorphous indium gallium zinc oxide thin-flim transistors (a-IGZO TFTs) is proposed and demonstrated for the first time in this article.

TL;DR: In this article, the effects of hot carriers on amorphous In-Ga-Zn-O thin film transistors (TFTs) of different geometric structures were investigated, and three types of via-contact structure TFTs are used in this experiment, defined as source-drain large (SD large), source-drone normal (SD normal), and fork-shaped.

TL;DR: In this article, the authors presented analytical $1/f$ noise expressions for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter $\alpha $ in the mobility equation.