Stephan Wirths

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.

TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.

TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.

TL;DR: In this paper, the authors proposed a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy.

TL;DR: In this article, chemical vapor deposition of direct bandgap GeSn alloys with a high Γ- to L-valley energy separation and large thicknesses for efficient optical mode confinement is presented and discussed.