Stéphane Xavier

TL;DR: It is demonstrated that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed.

TL;DR: Non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature are reported by storing data in the electric polarization direction of a ferroelectric tunnel barrier.

TL;DR: This work reports on synapses based on ferroelectric tunnel junctions and shows that STDP can be harnessed from inhomogeneous polarization switching and demonstrates that conductance variations can be modelled by the nucleation-dominated reversal of domains.

TL;DR: A demonstration of the ability to transmit spin currents over distances of more than one hundred micrometres with an efficiency of up to 75% in graphene grown epitaxially on silicon carbide improves the prospects of graphene-based spintronic devices.

TL;DR: This work investigates the underlying antifogging mechanism in model materials designed to mimic natural systems, and explains the importance of the texture's feature size and shape.