Toshitsugu Sakamoto

TL;DR: In this article, the authors describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance, which is a chalcogenide semiconductor sandwiched between copper and metal electrodes.

TL;DR: In this paper, a reconfigurable LSI employing a nonvolatile nanometer-scale switch, called NanoBridge, is proposed, and its basic operations are demonstrated, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays.

TL;DR: In this article, the authors examined the electronic transport of a solid electrolyte resistive switch and deduced that the conductive path is composed of Cu metal precipitated in the liquid by an electrochemical reaction, and observed Coulomb blockade phenomena at 4K when the switch was in the off state.

TL;DR: In this paper, a novel solid-electrolyte nonvolatile switch that was developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte.

TL;DR: In this paper, the authors investigated quantum effects in electrically variable shallow junction metal-oxide-semiconductor field effect transistors with an 8 nm long gate and showed that the direct tunneling current will exceed the thermal current and will become detrimental to lowvoltage operation of MOSLSIs in the 5 nm gate generation.