T
Toshitsugu Sakamoto
Researcher at NEC
Publications - 224
Citations - 3567
Toshitsugu Sakamoto is an academic researcher from NEC. The author has contributed to research in topics: Electrode & Crossbar switch. The author has an hindex of 29, co-authored 221 publications receiving 3435 citations. Previous affiliations of Toshitsugu Sakamoto include Korea University.
Papers
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Journal ArticleDOI
Nanometer-scale switches using copper sulfide
Toshitsugu Sakamoto,Hiroshi Sunamura,Hisao Kawaura,Tsuyoshi Hasegawa,Tomonobu Nakayama,Masakazu Aono,Masakazu Aono +6 more
TL;DR: In this article, the authors describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance, which is a chalcogenide semiconductor sandwiched between copper and metal electrodes.
Journal ArticleDOI
A nonvolatile programmable solid electrolyte nanometer switch
Shunichi Kaeriyama,Toshitsugu Sakamoto,Hiroshi Sunamura,Masayuki Mizuno,Hisao Kawaura,Tsuyoshi Hasegawa,Kazuya Terabe,Tomonobu Nakayama,Masakazu Aono +8 more
TL;DR: In this paper, a reconfigurable LSI employing a nonvolatile nanometer-scale switch, called NanoBridge, is proposed, and its basic operations are demonstrated, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays.
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Electronic transport in Ta2O5 resistive switch
Toshitsugu Sakamoto,Kevin Lister,Kevin Lister,Naoki Banno,Tsuyoshi Hasegawa,Kazuya Terabe,Masakazu Aono +6 more
TL;DR: In this article, the authors examined the electronic transport of a solid electrolyte resistive switch and deduced that the conductive path is composed of Cu metal precipitated in the liquid by an electrochemical reaction, and observed Coulomb blockade phenomena at 4K when the switch was in the off state.
Journal ArticleDOI
Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch
Naoki Banno,Toshitsugu Sakamoto,Noriyuki Iguchi,Hiroshi Sunamura,Kazuya Terabe,Tsuyoshi Hasegawa,Masakazu Aono +6 more
TL;DR: In this paper, a novel solid-electrolyte nonvolatile switch that was developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte.
Journal ArticleDOI
Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors
TL;DR: In this paper, the authors investigated quantum effects in electrically variable shallow junction metal-oxide-semiconductor field effect transistors with an 8 nm long gate and showed that the direct tunneling current will exceed the thermal current and will become detrimental to lowvoltage operation of MOSLSIs in the 5 nm gate generation.