Proceedings ArticleDOI
A 1 W CMOS power amplifier for GSM-1800 with 55% PAE
C. Fallesen,P. Asbeck +1 more
- Vol. 2, pp 911-914
TLDR
In this article, a CMOS power amplifier for the GSM-1800 standard, with only two external matching components and a few decoupling capacitors, was presented, which is comparable to commercially available power amplifiers in other technologies.Abstract:
Until recently it was the common opinion that CMOS RF power amplifiers were not feasible for mobile handsets. This paper presents a CMOS power amplifier for the GSM-1800 standard, with only two external matching components and a few decoupling capacitors. The performance of the power amplifier is better than any other CMOS power amplifier reported and comparable to commercially available power amplifiers in other technologies.read more
Citations
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Journal ArticleDOI
The class-E/F family of ZVS switching amplifiers
TL;DR: In this article, a new family of switching amplifiers, each member having some of the features of both class E and inverse F, is introduced, which have class-E features such as incorporation of the transistor parasitic capacitance into the circuit.
Proceedings ArticleDOI
A Fully Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
Ichiro Aoki,S. Kee,Rahul Magoon,R. Aparicio,Florian Bohn,Jeff Zachan,Geoff Hatcher,Donald Mcclymont,Ali Hajimiri +8 more
TL;DR: Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier in a standard 130 nm CMOS process that produces up to +35 dBm of RF power with power-added efficiency of 51%.
Journal ArticleDOI
Device and technology evolution for Si-based RF integrated circuits
H.S. Bennett,Ralf Brederlow,J.C. Costa,Peter E. Cottrell,W.M. Huang,A.A. Immorlica,J.-E. Mueller,M. Racanelli,Hisashi Shichijo,C.E. Weitzel,Bin Zhao +10 more
TL;DR: The relationship between device feature size and device performance figures of merit (FoMs) is more complex for radio frequency (RF) applications than for digital applications as mentioned in this paper. But the authors in this paper focus on Si complementary metaloxide-semiconductor (CMOS), Si bipolar devices, including SiGe heterojunction bipolar transistors, RF devices, and integrated circuits.
Journal ArticleDOI
A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
Ichiro Aoki,S. Kee,Rahul Magoon,R. Aparicio,Florian Bohn,Jeff Zachan,Geoff Hatcher,Donald Mcclymont,Ali Hajimiri +8 more
TL;DR: In this paper, a fully-integrated quad-band power amplifier (PA) is implemented in a standard 130 nm CMOS process, which integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V.
Journal ArticleDOI
A CMOS RF Power Amplifier Using an Off-Chip Transmision Line Transformer With 62% PAE
TL;DR: In this paper, a two-stage 900-MHz CMOS differential power amplifier (PA) is designed and implemented in a 0.18-mum radio frequency CMOS process, where a transmission line transformer on a printed circuit board is used as an output power combiner and matching circuits of a class-E power stage.
References
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Journal ArticleDOI
A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications
King-Chun Tsai,Paul R. Gray +1 more
TL;DR: In this article, a 1-W, class-E power amplifier is implemented in a 0.35-/spl mu/m CMOS technology and suitable for operations up to 2 GHz.
Journal ArticleDOI
A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-/spl mu/m CMOS
Changsik Yoo,Qiuting Huang +1 more
TL;DR: By employing these design techniques, the power amplifier can deliver 0.9-W output power to 50-/spl Omega/ load at 900 MHz with 41% power-added efficiency (PAE) from a 1.8-V supply without stressing the active devices.
Proceedings ArticleDOI
A 2.5-V, 1-W monolithic CMOS RF power amplifier
D. Su,W. McFarland +1 more
TL;DR: In this paper, a monolithic CMOS RF power amplifier has been designed and fabricated in a standard 0.8/spl mu/m CMOS technology and shown to provide l-W of output power at 824-849 MHz to a 50-ohm load from a single 2.5-V supply.
Proceedings ArticleDOI
Fully-integrated CMOS RF amplifiers
R. Gupta,D.J. Allstot +1 more
TL;DR: In this article, a distributed amplifier and a balanced power amplifier are designed in a 0.6 /spl mu/m digital CMOS process, and use only on-chip spiral inductors with Q-values in the range of 2-4.