A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure

TLDR: In this paper, the authors presented a 183 GHz low-noise amplifier (LNA) designed primarily for water vapor detection in atmosphere, based on InGaAs metamorphic high electron mobility transistor (mHEMT) technology.

Abstract: This letter presents a 183 GHz low-noise amplifier (LNA), designed primarily for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of $24\pm 2~{\rm dB}$ over the bandwidth 160-200 GHz. The input and output matching are $-11~{\rm dB}$ and $-10~{\rm dB}$ , respectively. Moreover, the dc power dissipation at the optimal bias for noise is as low as 24 mW.