Open Access
A Four-Step Method for De-Embedding Gigahertz
TLDR
The proposed de-embedding method addresses issues of substrate coupling and contact effects and is therefore suitable for measurements with lossy technologies such as CMOS and allows large devices to be measured with high accuracy.Abstract:
In this paper, a de-embedding method is proposed for conducting accurate on-wafer device measurements in the gi- gahertz range. The method addresses issues of substrate coupling and contact effects and is therefore suitable for measurements with lossy technologies such as CMOS. The method assumes a probe-tip two-port calibration performed with well-known techniques and impedance substrates. By employing a physical interpretation of the test-fixture, the method alleviates a number of known prob- lems with common de-embedding procedures. Four distinct math- ematical steps are suggested to de-embed parasitics for the test-fix- ture to give an accurate measurement of the device under test. By introducing a simple compensation factor for in-fixture stan- dard imperfections, the proposed method allows large devices to be measured with high accuracy. The applicability of the method is demonstrated with measurements up to 12 GHz.read more
Citations
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A calibrated lumped-element de-embedding technique for on-wafer RF characterization of high-quality inductors and high-speed transistors
L.F. Tiemeijer,R.J. Havens +1 more
TL;DR: In this article, a new de-embedding strategy using a physics-based lumped-element model for the test-structure parasitics calibrated on the frequency-dependent "open" and "short" dummy impedances is described, which reduces the experimental uncertainty on the deembedded figures of merit.
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References
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Proceedings ArticleDOI
An improved de-embedding technique for on-wafer high-frequency characterization
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Journal ArticleDOI
A three-step method for the de-embedding of high-frequency S-parameter measurements
TL;DR: In this paper, the authors proposed a general method of deembedding S-parameter measurements of the device under test (DUT) for which typical parasitics associated with probe pads and interconnect-metal lines can be deembedded from the measurement.
Journal ArticleDOI
Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
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Proceedings ArticleDOI
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