Proceedings ArticleDOI
A model for turn-off in bipolar transistors
P.L. Hower
- Vol. 26, pp 289-292
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TLDR
In this article, a new model is proposed that accounts for the dynamics of charge removal for a device which is initially in deep or "classical" saturation, and an experimental check of the model shows good agreement with measured values of storage time and V BE (t) and v CE(t) waveforms during the turn-off interval.Abstract:
A new model is proposed that accounts for the dynamics of charge removal for a device which is initially in deep or "classical" saturation. An experimental check of the model shows good agreement with measured values of storage time and V BE (t) and v CE (t) waveforms during the turn-off interval. An additional feature of the model is the possibility of introducing the action of circuit elements in an interactive manner so that device behavior in an actual switching circuit can be predicted. Finally, the possibility of predicting the onset of second breakdown is discussed.read more
Citations
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The Trench Power MOSFET: Part I—History, Technology, and Prospects
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Turn-Off Failure of Power MOSFET's
TL;DR: In this paper, the failure of power MOSFETs during inductive turn-off is compared to those of a bipolar transistor undergoing second breakdown, and it is shown that the electrical characteristics of these devices during failure are exactly the same as those of bipolar transistor during second breakdown.
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Power bipolar devices
TL;DR: In this paper, the specific aspects of bipolar device physics and the problems posed by the design of their structure are dealt with, focusing on the fundamental mechanisms which determine the on-state, the off-state and the switching performance.
Reverse Bias Second Breakdown in Power Switching Transistors.
TL;DR: In this paper, the second breakdown characteristics under reverse base drive have been investigated for two n-p-n power switching transistor structures using a non-destructive testing circuit, and three types of second breakdown have been identified, all occurring in a single device under different operating conditions.
References
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Journal ArticleDOI
Avalanche injection and second breakdown in transistors
P.L. Hower,V.G. Krishna Reddi +1 more
TL;DR: In this paper, it was shown that transistors having thin, lightly doped collector regions are particularly susceptible to avalanche injection, which suggests that some compromise may be necessary in the design of high-frequency power transistors.
Journal ArticleDOI
Reverse recovery processes in silicon power rectifiers
TL;DR: In this paper, the authors present an account of a number of investigations that have been recently carried out in the Semiconductor Laboratory Pretzfeld, Siemens AG, in order to understand the switching processes in power rectifiers from the forward into the reverse state.
Journal ArticleDOI
Gate turn-off in p-n-p-n devices
TL;DR: In this article, a simple two-dimensional model for gated turn-off of a p-n-p-n device is used to derive an expression relating the storage time and the turnoff gain.
Journal ArticleDOI
Two-dimensional computer simulation for switching a bipolar transistor out of saturation
TL;DR: In this article, a two-dimensional numerical analysis for the turnoff of a bipolar transistor from high injection level (V BE = 900 mV) is carried out, where V BC is kept constant at 1 V. Distributions of potential, electron, and hole density are interpreted and lead to a subdivision of the total transient time into four time regions, each governed by a single phenomenon.
Proceedings ArticleDOI
Some effects of base current on transistor switching and reverse-bias second breakdown
D.L. Blackburn,D.W. Berning +1 more
TL;DR: In this paper, the reverse bias second breakdown susceptibility of high-voltage, fast-switching power transistors has been investigated and a unique test circuit is described which permits devices to be taken into reverse-bias second breakdown many times with little or no apparent degradation.