Journal ArticleDOI
A novel gate insulator for flexible electronics
TLDR
In this article, field effect transistors using poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al2O3 on Al) are demonstrated.About:
This article is published in Organic Electronics.The article was published on 2003-06-01. It has received 117 citations till now. The article focuses on the topics: Flexible electronics & Organic semiconductor.read more
Citations
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Electron and ambipolar transport in organic field-effect transistors.
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Device Physics of Solution‐Processed Organic Field‐Effect Transistors
TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
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Organic semiconductors for solution-processable field-effect transistors (OFETs).
TL;DR: Micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.
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Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics
TL;DR: In this article, the authors review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics.
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Gate Insulators in Organic Field-Effect Transistors
TL;DR: In this article, the authors reviewed recent progress in the understanding of insulator/semiconductor interfaces in organic field effect transistors (OFETs) and emphasized that the choice of gate insulator is as important for high-quality OFET devices as the semiconductor itself, especially because of the unique transport mechanisms operating in them.
References
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High-Resolution Inkjet Printing of All-Polymer Transistor Circuits
Henning Sirringhaus,Takeo Kawase,Richard H. Friend,Tatsuya Shimoda,M. Inbasekaran,Weishi Wu,E. P. Woo +6 more
TL;DR: It is shown that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers, and high mobilities were achieved.
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Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study
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Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility
TL;DR: In this paper, the electrical characteristics of field effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed and the authors demonstrate that both high field effect mobilities (ca. 0.045 cm2/V) and relatively high on/off current ratios (greater than 103) can be achieved.
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Alternative dielectrics to silicon dioxide for memory and logic devices
TL;DR: Development of higher permittivity dielectrics for dynamic random-access memories serves to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.
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